The dry etching property of TiO 2 thin films using metal-insulator-metal capacitor in inductively coupled plasma system

Vacuum

Volumn 86, Issue 12, 2012, Pages 2152-2157

  Woo, Jong Chang ^a   Chun, Yoon Soo ^a   Joo, Young Hee ^a   Kim, Chang Ii ^a  

^a Chung Ang University   (South Korea)

Author keywords

Etch; Inductively coupled plasma; TiO 2; X ray photoelectron spectroscopy

Indexed keywords

DC BIAS VOLTAGE; ETCH; ETCH MECHANISM; ETCH RATES; ETCHED SURFACE; ETCHING CHARACTERISTICS; ETCHING PARAMETERS; ETCHING PROPERTIES; INDUCTIVELY-COUPLED; METAL INSULATOR METAL CAPACITOR (MIM); MIXTURE RATIO; PHYSICAL SPUTTERING; PROCESS PRESSURE; RF-POWER; TIO;

INDUCTIVELY COUPLED PLASMA; PHOTOELECTRONS; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

TITANIUM DIOXIDE;

EID: 84864036292     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2012.05.016     Document Type: Article

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