Increased conductance of individual self-assembled GeSi quantum dots by inter-dot coupling studied by conductive atomic force microscopy

Nanoscale Research Letters

Volumn 7, Issue , 2012, Pages

  Zhang, Yifei ^a   Ye, Fengfeng ^a   Lin, Jianhui ^a   Jiang, Zuimin ^a   Yang, Xinju ^a  

^a FUDAN UNIVERSITY   (China)

Author keywords

Conductance; Conductive atomic force microscopy; Coupling; GeSi quantum dots

Indexed keywords

ATOMIC FORCE MICROSCOPY; BIAS VOLTAGE; COUPLINGS; ELECTRIC CONDUCTANCE; NANOCRYSTALS; SI-GE ALLOYS;

AVERAGE CURRENTS; CONDUCTIVE ATOMIC FORCE MICROSCOPY; CONDUCTIVE PROPERTIES; COUPLING EFFECT; DOT DENSITY; INTERDOT COUPLING; LATERAL COUPLING; SINGLE LAYER;

SEMICONDUCTOR QUANTUM DOTS;

EID: 84864022770     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1186/1556-276X-7-278     Document Type: Article

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