Molecular ground hole state of vertically coupled GeSi/Si self-assembled quantum dots

Nanotechnology

Volumn 19, Issue 5, 2008, Pages

  Yakimov, A I ^a   Mikhalyov, G Yu ^a   Dvurechenskii, A V ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

BINDING ENERGY; GROUND STATE; QUANTUM THEORY; SELF ASSEMBLY;

BOND RESTORATION; DOT SEPARATION; MECHANICAL TUNNELING;

SEMICONDUCTOR QUANTUM DOTS;

GERMANIUM; QUANTUM DOT; SILICON;

ARTICLE; PRIORITY JOURNAL; QUANTUM MECHANICS;

EID: 38349078281     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/19/05/055202     Document Type: Article

References (28)

1. Barenco A, Deutsch D, Ekert A and Jozsa R 1995 Phys. Rev. Lett. 74 4083
2. Zanardi P and Rossi F 1998 Phys. Rev. Lett. 81 4752
3. Loss D and DiVincenzo D P 1998 Phys. Rev. A 57 120
4. Biolatti E, Iotti R C, Zanardi P and Rossi F 2000 Phys. Rev. Lett. 85 5647
5. Zakharov N D, Talalaev V G, Werner P, Tonkikh A A and Cirlin G E 2003 Appl. Phys. Lett. 83 3084
6. Talalaev V G, Cirlin G E, Tonkikh A A, Zakharov N D and Werner P 2003 Phys. Status Solidi a 198 R4
7. Fonseca L R C, Jimenez J L and Leburton J P 1998 Phys. Rev. B 58 9955
8. Pryor C 1998 Phys. Rev. Lett. 80 3579
9. Korkusinski M and Hawrylak P 2001 Phys. Rev. B 63 195311
10. Sheng W and Leburton J P 2002 Phys. Lett. 88 167401
11. He L, Bester G and Zunger A 2005 Phys. Rev. B 72 081311
12. He L, Bester G and Zunger A 2005 Phys. Rev. B 72 195307
13. Boucaud P, Williams J B, Gill K S, Sherwin M S, Schoenfeld W V and Petroff P M 2000 Appl. Phys. Lett. 77 4356
14. Shtrichman I, Metzner C, Gerardot B D, Schoenfeld W V and Petroff P M 2002 Phys. Rev. B 65 081303
15. Adawi A M et al 2003 Phys. Status Solidi b 238 341
16. Bryllert T, Borgstrom M, Wernersson L-E, Siefert W and Samuelson L 2003 Appl. Phys. Lett. 82 2655
17. Ota T, Ono K, Stopa M, Hatano T, Tarucha S, Song H Z, Nakata Y, Miyazawa T, Ohshima T and Yokoyama N 2004 Phys. Rev. Lett. 93 066801
18. Sobolev M M, Zirlin G E, Samsonenko Yu B, Polyakov N K, Tonkikh A A and Musikhin Yu G 2005 Semiconductors 39 119
19. Yakimov A I, Nikiforov A I and Dvurechenskii A V 2007 JETP Lett. 86 478
20. Yakimov A I, Dvurechenskii A V and Nikiforov A I 2006 J. Nanoelectron. Optoelectron. 1 119
21. Nenashev A V and Dvurechenskii A V 2000 JETP 91 497
22. Slater J C and Koster G F 1954 Phys. Rev. 94 1498
23. Chadi D J 1977 Phys. Rev. B 16 790
24. Pedersen F B and Chang Y-C 1996 Phys. Rev. B 53 1507
25. Bir G L and Pikus G E 1974 Symmetry and Strain-Induced Effects in Semiconductors (New York: Wiley)
26. Van de Walle C G 1989 Phys. Rev. B 39 1871
27. Nenashev A V, Dvurechenskii A V and Zinovieva A F 2003 Phys. Rev. B 67 205301
28. Pollak F H and Cardona M 1968 Phys. Rev. 172 816