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Volumn 12, Issue 6, 2012, Pages 1510-1514

Investigation of current-voltage and capacitance-voltage characteristics of Ag/perylene-monoimide/n-GaAs Schottky diode

Author keywords

GaAs; Metal semiconductor contact; Organic semiconductors; Perylene

Indexed keywords

BARRIER HEIGHTS; BUILT-IN POTENTIAL; C-V CHARACTERISTIC; CAPACITANCE VOLTAGE CHARACTERISTIC; CAPACITANCE-VOLTAGE CHARACTERISTICS; CURRENT VOLTAGE; EXPERIMENTAL DATA; GAAS; I-V MEASUREMENTS; IDEALITY FACTORS; IONIZED DONORS; IV CHARACTERISTICS; METAL-SEMICONDUCTOR CONTACTS; PERYLENES; RECTIFICATION BEHAVIOR; ROOM TEMPERATURE; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY DIODES; SERIES RESISTANCES; STANDARD ANALYSIS; TEMPERATURE RANGE; TEMPERATURE VALUES;

EID: 84863980882     PISSN: 15671739     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cap.2012.04.028     Document Type: Article
Times cited : (18)

References (41)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.