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Volumn 12, Issue 6, 2012, Pages 1510-1514
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Investigation of current-voltage and capacitance-voltage characteristics of Ag/perylene-monoimide/n-GaAs Schottky diode
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Author keywords
GaAs; Metal semiconductor contact; Organic semiconductors; Perylene
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Indexed keywords
BARRIER HEIGHTS;
BUILT-IN POTENTIAL;
C-V CHARACTERISTIC;
CAPACITANCE VOLTAGE CHARACTERISTIC;
CAPACITANCE-VOLTAGE CHARACTERISTICS;
CURRENT VOLTAGE;
EXPERIMENTAL DATA;
GAAS;
I-V MEASUREMENTS;
IDEALITY FACTORS;
IONIZED DONORS;
IV CHARACTERISTICS;
METAL-SEMICONDUCTOR CONTACTS;
PERYLENES;
RECTIFICATION BEHAVIOR;
ROOM TEMPERATURE;
SCHOTTKY BARRIER HEIGHTS;
SCHOTTKY DIODES;
SERIES RESISTANCES;
STANDARD ANALYSIS;
TEMPERATURE RANGE;
TEMPERATURE VALUES;
CAPACITANCE MEASUREMENT;
ELECTRIC PROPERTIES;
ELECTRIC RESISTANCE;
FACTOR ANALYSIS;
GALLIUM ARSENIDE;
POLYCYCLIC AROMATIC HYDROCARBONS;
SCHOTTKY BARRIER DIODES;
SEMICONDUCTING GALLIUM;
SEMICONDUCTING ORGANIC COMPOUNDS;
SEMICONDUCTOR DIODES;
CURRENT VOLTAGE CHARACTERISTICS;
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EID: 84863980882
PISSN: 15671739
EISSN: None
Source Type: Journal
DOI: 10.1016/j.cap.2012.04.028 Document Type: Article |
Times cited : (18)
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References (41)
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