High-quality surface passivation of silicon using native oxide and silicon nitride layers

Applied Physics Letters

Volumn 101, Issue 2, 2012, Pages

  Chowdhury, Zahidur R ^a   Cho, Kevin ^a   Kherani, Nazir P ^a  

^a UNIVERSITY OF TORONTO   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE SILICONS; HIGH QUALITY; HIGH QUALITY SURFACE; INTERFACE CHARGE; INTERFACE DEFECTS; MINORITY CARRIER LIFETIMES; NATIVE OXIDE LAYER; NATIVE OXIDE THICKNESS; NATIVE OXIDES; OXIDE LAYER; PLASMA ENHANCED CHEMICAL VAPOUR DEPOSITION; SURFACE PASSIVATION; SURFACE RECOMBINATION VELOCITIES;

PASSIVATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

SILICON NITRIDE;

EID: 84863915063     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4733336     Document Type: Article

References (20)

1. M. Taguchi, M. Taguchi, H. Sakata, and E. Maruyama, Sol. Energy Mater. Sol. Cells 95, 18 (2011). 10.1016/j.solmat.2010.04.030
2. U. Rau, N. Jensen, and J. H. Werner, in Proceedings of the 22nd European Photovoltaic Solar Energy Conference, Milan, Italy (2007), p. 816.
3. C. Leguijt, P. Lölgen, J. A. Eikelboom, P. H. Amesz, R. A. Steeman, W. C. Sinke, P. M. Sarro, L. A. Verhoef, P. P. Michiels, Z. H. Chen, and A. Rohatgi, Sol. Energy Mater. Sol. Cells 34, 177 (1994). 10.1016/0927-0248(94) 90038-8
4. Z. Chen, A. Rohatgi, and D. Ruby, in Proceedings of the IEEE 1st World Conference on Photovoltaic Energy Conversion, Waikoloa, HI (IEEE, 1994), p. 1331.
5. T. Lauinger, J. Schmidt, A. G. Aberle, and R. Hezel, Appl. Phys. Lett. 68, 1232 (1996). 10.1063/1.115936
6. J. Schmidt and M. Kerr, Sol. Energy Mater. Sol. Cells 65, 585 (2001). 10.1016/S0927-0248(00)00145-8
7. H. Mäckel and R. Lüdemann, J. Appl. Phys. 92, 2602 (2002). 10.1063/1.1495529
8. I. Martin, M. Vetter, A. Orpella, J. Puigdollers, A. Cuevas, and R. Alcubilla, Appl. Phys. Lett. 79, 2199 (2001). 10.1063/1.1404406
9. W. L. Warren, J. Kanicki, J. Robertson, E. H. Poindexter, and P. J. McWhorter, J. Appl. Phys. 74, 4034 (1993). 10.1063/1.355315
10. G. Dingemans, M. M. Mandoc, S. Bordihn, M. C. M. van de Sanden, and W. M. M. Kessels, Appl. Phys. Lett. 98, 222102 (2011). 10.1063/1.3595940
11. S. Dauwe, L. Mittelstädt, A. Metz, and R. Hezel, Prog. Photovoltaics 10, 271 (2002). 10.1002/pip.420
12. J. Schmidt, M. Kerr, and A. Cuevas, Semicond. Sci. Technol. 16, 164 (2001). 10.1088/0268-1242/16/3/308
13. S. Narasimha and A. Rohatgi, Appl. Phys. Lett. 72, 1872 (1998). 10.1063/1.121211
14. Y. Larionova, V. Mertens, N.-P. Harder, and R. Brendel, Appl. Phys. Lett. 96, 032105 (2010). 10.1063/1.3291681
15. M. Hofmann, S. Janz, C. Schmidt, S. Kambor, D. Suwito, N. Kohn, J. Rentsch, R. Preu, and S. W. Glunz, Sol. Energy Mater. Sol. Cells 93, 1074 (2009). 10.1016/j.solmat.2008.11.056
16. S. Olibet, E. V.-Sauvain, and C. Ballif, Phys. Rev. B 76, 035326 (2007). 10.1103/PhysRevB.76.035326
17. B. Bahardoust, A. Chutinan, K. Leong, A. B. Gougam, D. Yeghikyan, T. Kosteski, N. P. Kherani, and S. Zukotynski, Phys. Status Solidi A 207, 539 (2010). 10.1002/pssa.200982803
18. J. D. Plummer, M. D. Deal, and P. B. Griffin, Silicon VLSI Technology Fundamentals, Practice and Modeling (Prentice-Hall, Englewood Cliffs, NJ, 2000).
19. R. A. Sinton and A. Cuevas, Appl. Phys. Lett. 69, 2510 (1996). 10.1063/1.117723
20. M. Morita, T. Ohmi, E. Hasegawa, M. Kawakami, and M. Ohwada, J. Appl. Phys. 68, 1272 (1990). 10.1063/1.347181