A study on MIS Schottky diode based hydrogen sensor using La 2O 3 as gate insulator

Microelectronics Reliability

Volumn 52, Issue 8, 2012, Pages 1660-1664

  Chen, Gang ^a   Yu, Jerry ^a   Lai, P T ^a  

^a UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER HEIGHTS; CONDUCTION MECHANISM; FOWLER-NORDHEIM TUNNELING; GATE INSULATOR; HYDROGEN GAS; HYDROGEN SENSOR; HYDROGEN-SENSING; MAXIMUM VALUES; METAL-INSULATOR-SEMICONDUCTORS; OPERATING TEMPERATURE; POOLE-FRENKEL EFFECT; SCHOTTKY DIODES;

DYNAMIC RESPONSE; ELECTRIC PROPERTIES; HYDROGEN; LANTHANUM OXIDES; MIS DEVICES; SCHOTTKY BARRIER DIODES;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 84863722855     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2012.03.022     Document Type: Article

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