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Volumn 72, Issue 2, 2001, Pages 108-114

Hydrogen sensitive negative switching behavior in metal-oxide-semiconductor devices

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC IMPEDANCE MEASUREMENT; EQUIVALENT CIRCUITS; HYDROGEN; MOS DEVICES; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR JUNCTIONS;

EID: 0035151955     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-4005(00)00609-2     Document Type: Article
Times cited : (9)

References (8)
  • 2
    • 49149135059 scopus 로고
    • Hydrogen sensitive MOS-structures, Part 1. Principles and applications
    • I. Lundström, Hydrogen sensitive MOS-structures, Part 1. Principles and applications, Sensors Actuators 1 (1981) 403-426.
    • (1981) Sensors Actuators , vol.1 , pp. 403-426
    • Lundström, I.1
  • 3
    • 36849109592 scopus 로고
    • Thin-MIS-structure Si negative-resistance diode
    • Yamamoto T., Morimoto M. Thin-MIS-structure Si negative-resistance diode. Appl. Phys. Lett. 20:1972;269-270.
    • (1972) Appl. Phys. Lett. , vol.20 , pp. 269-270
    • Yamamoto, T.1    Morimoto, M.2
  • 5
    • 0020732953 scopus 로고
    • Hydrogen-sensitive silicon tunnel MIS switching diodes
    • Kawamura K., Yamamoto T. Hydrogen-sensitive silicon tunnel MIS switching diodes. IEEE EDL. 4:1983;88-89.
    • (1983) IEEE EDL , vol.4 , pp. 88-89
    • Kawamura, K.1    Yamamoto, T.2
  • 6
    • 0022706333 scopus 로고
    • An integrated hydrogen switching sensor with a Pd-Si tunnel MIS structure
    • Ogita M., Ye D.B., Kawamura K., Yamamoto T. An integrated hydrogen switching sensor with a Pd-Si tunnel MIS structure. Sensors Actuators. 9:1986;157-164.
    • (1986) Sensors Actuators , vol.9 , pp. 157-164
    • Ogita, M.1    Ye, D.B.2    Kawamura, K.3    Yamamoto, T.4
  • 7
    • 0028541318 scopus 로고
    • Hydrogen-sensitive property of switching device with a Pd-Si tunnel metal insulator semiconductor structure
    • Nakagomi S., Yamamoto T. Hydrogen-sensitive property of switching device with a Pd-Si tunnel metal insulator semiconductor structure. Jpn. J. Appl. Phys. 33:1994;6136-6140.
    • (1994) Jpn. J. Appl. Phys. , vol.33 , pp. 6136-6140
    • Nakagomi, S.1    Yamamoto, T.2
  • 8
    • 0030372417 scopus 로고    scopus 로고
    • Evaluation of hydrogen-sensitive switching device by capacitance-voltage method
    • Nakagomi S., Iriyama T., Yamamoto T. Evaluation of hydrogen-sensitive switching device by capacitance-voltage method. Sensors Actuators B. 37:1996;157-162.
    • (1996) Sensors Actuators B , vol.37 , pp. 157-162
    • Nakagomi, S.1    Iriyama, T.2    Yamamoto, T.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.