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Applied Physics Letters

Volumn 101, Issue 1, 2012, Pages

Self-compensation in highly n-type InN

(6) Rauch, C a Tuomisto, F a King, P D C b Veal, T D c Lu, H d,e Schaff, W J d

a AALTO UNIVERSITY (Finland)

b UNIVERSITY OF ST ANDREWS (United Kingdom)

c UNIVERSITY OF LIVERPOOL (United Kingdom)

d School of Chemical and Molecular Engineering (United States)

e NANJING UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

HALL EFFECT MEASUREMENT; SCATTERING CENTERS; SELF-COMPENSATION; VACANCY COMPLEXES;

ELECTRON MOBILITY; POSITRON ANNIHILATION SPECTROSCOPY;

DEFECTS;

EID: 84863669054 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4732508 Document Type: Article

Times cited : (13)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.