Photovoltaic properties of black silicon microstructured by femtosecond pulsed laser

Optik

Volumn 123, Issue 16, 2012, Pages 1474-1477

  Bao, Xi ^a   Liu, Feng ^a   Zhou, Xiaoli ^a  

^a FUDAN UNIVERSITY   (China)

Author keywords

Black silicon; Femtosecond pulsed laser; Photovoltaic properties

Indexed keywords

AMBIENT GAS; BLACK SILICON; CONTINUOUS LASERS; EXTERNAL QUANTUM EFFICIENCY; FEMTOSECOND PULSED LASER; MAXIMUM POWER; MICRO STRUCTURING; MICROSTRUCTURED SILICONS; MULTICRYSTALLINE; N-DOPED; PHOTORESPONSIVITY; PHOTOVOLTAIC; PHOTOVOLTAIC PROPERTY; PROTOTYPE DEVICES; SILICON-BASED; VISIBLE REGION;

CONVERSION EFFICIENCY; LASER EXCITATION; LIGHT ABSORPTION; NEON; OPEN CIRCUIT VOLTAGE; PULSED LASERS; SULFUR HEXAFLUORIDE;

SILICON WAFERS;

EID: 84863624387     PISSN: 00304026     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ijleo.2011.11.008     Document Type: Article

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