Erratum: Combining electron-neutral building blocks with intramolecular 'Conformational Locks' affords stable, high-mobility P- and N-channel polymer semiconductors (Journal of the American Chemical Society (2012) 134 (10966-10973) DOI: 10.1021/ja303401s);Combining electron-neutral building blocks with intramolecular "conformational locks" affords stable, high-mobility P- and N-channel polymer semiconductors

Journal of the American Chemical Society

Volumn 134, Issue 26, 2012, Pages 10966-10973

  Huang, Hui ^a   Chen, Zhihua ^b   Ortiz, Rocio Ponce ^a,e   Newman, Christopher ^b   Usta, Hakan ^b   Lou, Sylvia ^a   Youn, Jangdae ^a   Noh, Yong Young ^c   Baeg, Kang Jun ^d   Chen, Lin X ^a   Facchetti, Antonio ^a   Marks, Tobin ^a  

^a NORTHWESTERN UNIVERSITY   (United States)

^b POLYERA CORPORATION   (United States)

^c Hanbat National University   (South Korea)

^d Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^e UNIVERSITY OF MÁLAGA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; ELECTRONIC STRUCTURE; ELECTRONS; FIELD EFFECT TRANSISTORS; LOCKS (FASTENERS); POLYMERS; X RAY DIFFRACTION;

COMPLEMENTARY INVERTERS; ELECTRON-DEFICIENT; HIGH VOLTAGE GAIN; ORGANIC ELECTRONICS; ORGANIC THIN FILM TRANSISTORS; POLYMER SEMICONDUCTORS; POLYMERIC SEMICONDUCTORS; SOLUTION PROCESSABLE;

THIN FILM TRANSISTORS;

NITROGEN; OXYGEN; PHOSPHORUS; POLYMER; SULFUR; VINYL DERIVATIVE;

ARTICLE; CHEMICAL STRUCTURE; CONFORMATION; CONJUGATION; DENSITY FUNCTIONAL THEORY; ELECTRON; MOLECULAR STABILITY; PRINTING; SEMICONDUCTOR; SYNTHESIS; X RAY DIFFRACTION;

EID: 84863510989     PISSN: 00027863     EISSN: 15205126     Source Type: Journal    
DOI: 10.1021/ja400834j     Document Type: Erratum

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