Effects of concentration and thermal annealing on the optical activation of Er implanted into GaN layers

Radiation Effects and Defects in Solids

Volumn 167, Issue 7, 2012, Pages 512-519

  Sathish, N ^a,e   Pathak, A P ^a   Devaraju, G ^a   Trave, E ^b   Mazzoldi, P ^c   Dhamodaran, S ^d   Kulkarni, V N ^d  

^a UNIVERSITY OF HYDERABAD   (India)

^b CA' FOSCARI UNIVERSITY OF VENICE   (Italy)

^c UNIVERSITY OF PADOVA   (Italy)

^d INDIAN INSTITUTE OF TECHNOLOGY KANPUR   (India)

^e ukasiewicz Research Network Institute of Microelectronics and Photonics   (Poland)

Author keywords

erbium; GaN; photo luminescence; RBS channelling

Indexed keywords

ANNEALING TEMPERATURES; ER CONCENTRATIONS; ER-DOPED; GAN; GAN LAYERS; IMPLANTATION DOSE; LATTICE SITES; OPTICAL ACTIVATION; PL EMISSION; RBS/CHANNELLING; RUTHERFORD BACKSCATTERING SPECTROMETRY; SHOULDER PEAKS; SPECTRAL SHAPES; SYNTHESIS PROCEDURE; THERMAL-ANNEALING; WIDE-BAND-GAP SEMICONDUCTOR;

ANNEALING; GALLIUM NITRIDE; LIGHT; OPTICAL PROPERTIES; RUTHERFORD BACKSCATTERING SPECTROSCOPY;

ERBIUM;

EID: 84863458168     PISSN: 10420150     EISSN: 10294953     Source Type: Journal    
DOI: 10.1080/10420150.2012.686111     Document Type: Conference Paper

References (20)

1. Chalamala, B.R.; Friend, R.H.; Jackson, T.N.; Libsch, F.R., Eds. Flat-Panel Displays and Sensors: Volume 558: Principles, Materials, and Processes (MRS Proceedings), Mater. Res. Soc.,Warrendale, Pennsylvania, USA. 2000; 2000, 558.
2. Steckl, A.J.; Zavada, J.M. Mater. Res. Soc. Bull. 1999, 24 (9), 16-17.
3. Heikenfeld, J.; Steckl, A.J. Appl. Phys. Lett. 2000, 77, 3520-3522.
4. Lee, D.S.; Heikenfeld, J.; Birkhahn, R.; Garter, M.; Lee, B.K.; Steckl, A.J. Appl. Phys. Lett. 2000, 76, 1525-1527.
5. Torvik, J.T.; Qiu, C.H.; Feuerstein, R.J.; Pankove, J.I.; Namavar, F. J. Appl. Phys. 1997, 81, 6343-6350.
6. Steckl, A.J.; Garter, M.; Birkhahn, R.; Scofield, J. Appl. Phys. Lett. 1998, 73, 2450-2452.
7. Garter, M.; Scofield, J.; Birkhahn, R.; Steckl, A.J. Appl. Phys. Lett. 1999, 74, 182-184.
8. Birkhahn, R.; Garter, M.; Steckl, A.J. Appl. Phys. Lett. 1999, 74, 2161-2163.
9. Heikenfeld, J.; Garter, M.; Lee, D.S.; Birkhahn, R.; Steckl, A.J. Appl. Phys. Lett. 1999, 75, 1189-1191.
10. Heikenfeld, J.; Lee, D.S.; Garter, M.; Birkhahn, R.; Steckl, A.J. Appl. Phys. Lett. 2000, 76, 1365-1367.
11. Tesmer, J.R.; Nastasi, M., Eds. Handbook of Modern Ion Beam Analysis; MRS: Pennsylvania, USA, 1995.
12. Polman, A. J. Appl. Phys. 1997, 82, 1-39.
13. Lu, F.; Rizzi, A.; Carius, R.; Lei, C.H. J. Phys. D: Appl. Phys. 2004, 37, 1544-1547.
14. Alves, E.; Monteiro, T.; Soares, J.; Santos, L.; da Silva, M.F.; Soares, J.C.; Lojkowski,W.; Kolesnikov, D.; Viaden, R.; Correia, J.G. Mater. Sci. Eng. B 2001, 81, 132-140.
15. Alves, E.; Liu, C.; da Silva, M.F.; Soares, J.C.; Correia, R.; Monterio, T. Doping of GaN by ion implantation. Mater. Res. Soc. Symp. Proc. 2001, 647, O13.4.
16. Monterio, T.; Soares, J.; Correia, M.R.; Alves, E. J. Appl. Phys. 2001, 89, 6183-6188.
17. Chao, L.C.; Lee, B.K.; Chi, C.J.; Cheng, K.; Chyr, I.; Steckl, A.J. Appl. Phys. Lett. 1999, 75, 1833-1835.
18. Dalmasso, S.; Martin, R.W.; Edwards, P.R.; Donnell, K.P.O.; Pipeleers, B.;Vantomme, A.; Nakanishi,Y.;Wakahara, A.;Yoshida, A. Electron micro-probe analysis and cathodoluminescence spectroscopy of rare earth-implanted GaN. Mater. Res. Soc. Symp. Proc. 2003, 743, L6.15.
19. Lorenz, K.; Vianden, R.; Birkhahn, R.; Steckl, A.J.; da Silva, M.F.; Soares, J.C.; Alves, E. Nucl. Instrum Methods B 2000, 161, 946-951.
20. Alves, E.; da Silva, M.F.; Soares, J.C.; Vianden, R.; Bartels, J.; Kozaneck, A. Nucl. Instrum. Methods B 1999, 147, 383-387.