|
|
Volumn 37, Issue 11, 2004, Pages 1544-1547
|
|
The influence of annealing ambient on properties of Er-implanted GaN films
|
|
Author keywords
[No Author keywords available]
|
|
Indexed keywords
AGGLOMERATION;
ANNEALING;
DIFFUSION;
ERBIUM;
FILM GROWTH;
GALLIUM NITRIDE;
ION IMPLANTATION;
PHOTOLUMINESCENCE;
QUENCHING;
SEMICONDUCTOR DOPING;
SILICON;
SILICON CARBIDE;
SURFACE ROUGHNESS;
TRANSMISSION ELECTRON MICROSCOPY;
EXCITATION MECHANISM;
ION AGGREGATION;
LATTICE DAMAGE;
THERMAL QUENCHING;
SEMICONDUCTING FILMS;
|
|
EID: 2942620202
PISSN: 00223727
EISSN: None
Source Type: Journal
DOI: 10.1088/0022-3727/37/11/006 Document Type: Article |
|
Times cited : (3)
|
|
References (9)
|
