Carrier transport mechanism of AlGaN/GaN Schottky barrier diodes with various Al mole fractions

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 9, Issue 3-4, 2012, Pages 851-854

  Ha, Woo Jin ^a   Chhajed, Sameer ^a   Chavan, Ashonita ^a   Lee, Jae Hoon ^b   Kim, Ki Se ^b   Kim, Jong Kyu ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

Al mole fraction; AlGaN GaN heterostructures; Reverse leakage current; Schottky barrier height

Indexed keywords

ALGAN; ALGAN/GAN; ALGAN/GAN HETEROSTRUCTURES; ENERGY-BAND BENDING; HEAVILY DOPED; IDEALITY FACTORS; MOLE FRACTION; OXYGEN DONORS; REVERSE LEAKAGE CURRENT; SCHOTTKY; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY BARRIERS; SLOPE FACTORS; TRANSPORT MECHANISM; XPS ANALYSIS;

ALUMINUM; CARRIER TRANSPORT; GALLIUM; GALLIUM NITRIDE; SCHOTTKY BARRIER DIODES;

SEMICONDUCTOR METAL BOUNDARIES;

EID: 84863352376     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.201100487     Document Type: Article

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