Nanoporosity induced by ion implantation in deposited amorphous Ge thin films

Journal of Applied Physics

Volumn 111, Issue 11, 2012, Pages

  Romano, L ^a   Impellizzeri, G ^a   Bosco, L ^b   Ruffino, F ^a   Miritello, M ^a   Grimaldi, M G ^a  

^a UNIVERSITY OF CATANIA   (Italy)

^b SCUOLA SUPERIORE DI CATANIA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

BIOCHEMICAL SENSING; COLUMNAR STRUCTURES; DEPOSITION ENERGY; FUTURE APPLICATIONS; GE CONCENTRATIONS; GE THIN FILMS; ION IMPLANTED; LOW COSTS; MATERIAL PREPARATION; NANO-STRUCTURED LAYER; NANOPOROSITY; NANOPOROUS STRUCTURES; NUCLEATION AND GROWTH; POROUS FILM; ROOM TEMPERATURE; SI-GE ALLOYS; SPONGELIKE STRUCTURE; VOLUME EXPANSION;

ION IMPLANTATION; SENSORS; THIN FILMS; VAPOR DEPOSITION;

GERMANIUM;

EID: 84863323653     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4725427     Document Type: Conference Paper

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