Heavy ion implantation in Ge: Dramatic radiation induced morphology in Ge

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 24, Issue 1, 2006, Pages 510-514

  Janssens, T ^a   Huyghebaert, C ^a   Vanhaeren, D ^a   Winderickx, G ^a   Satta, A ^a   Meuris, M ^a   Vandervorst, W ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; GERMANIUM; HEAVY IONS; MORPHOLOGY; RADIATION EFFECTS; SURFACE ROUGHNESS;

JUNCTION FORMATION; SUBSURFACE HOLES; VOID FORMATION;

ION IMPLANTATION;

EID: 31544476598     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2151904     Document Type: Article

References (6)

1. A. Axmann, M. Schultz, and C. R. Fritzsche, Appl. Phys. 12, 173 (1977).
2. K. Benourhazi and J. P. Ponpon, Nucl. Instrum. Methods Phys. Res. B 71, 406 (1992).
3. G. S. Hubbard, E. E. Haller, and W. L. Hansen, IEEE Trans. Nucl. Sci. NS-24, 161 (1977).
4. R. G. Wilson, F. A. Stevie, and C. M. Magee, SIMS a Practical Handbook for Depth Profiling (Wiley, New York, 1989).
5. O. W. Holland, B. R. Appleton, and J. Narayan, J. Appl. Phys. 54, 2295 (1983).
6. N. Nitta, M. Taniwaki, Y. Hayashi, and T. Yoshiie, J. Appl. Phys. 92, 1799 (2002).