In situ reflectance monitoring for the MOVPE of strain-balanced InGaAs/GaAsP quantum-wells

Journal of Crystal Growth

Volumn 312, Issue 8, 2010, Pages 1364-1369

  Wang, Yunpeng ^a   Onitsuka, Ryusuke ^b   Deura, Momoko ^b   Yu, Wen ^a   Sugiyama, Masakazu ^b   Nakano, Yoshiaki ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

A1. Surface structure; A3. Metalorganic vapor phase epitaxy; B1. Gallium arsenic; B2. Semiconducting III V materials

Indexed keywords

A3. METALORGANIC VAPOR PHASE EPITAXY; B1. GALLIUM ARSENIC; METAL-ORGANIC VAPOR PHASE EPITAXY; SEMI CONDUCTING III-V MATERIALS;

ANISOTROPY; ARSENIC; CRYSTAL GROWTH; GALLIUM ALLOYS; ORGANOMETALLICS; REFLECTION; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; SURFACE STRUCTURE; VAPORS; WELLS;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 77949576565     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.11.063     Document Type: Article

References (15)

1. Zhang G., and Ovtchinnikov A. Appl. Phys. Lett. 62 (1993) 1644
2. Dutta N.K., Hobson W.S., Vakhsoori D., Han H., Freeman P.N., Jong J.F., and Lopata J. IEEE Photonics Technol. Lett. 8 (1996) 852
3. Cunningham J.E., Goosen K.W., Williams M., and Jan W.Y. Appl. Phys. Lett. 60 (1992) 727
4. Chu T.H., Cunnningham J.E., Woodward T.K., and Sizer II T. Appl. Phys. Lett. 62 (1993) 340
5. Dries J.C., Gokhale M.R., and Forrest S.R. Appl. Phys. Lett. 74 (1999) 2581
6. Ekins-Daukes N.J., Barnham K.W.J., Connolly J.P., Roberts J.S., Clark J.C., Hill G., and Mazzer M. Appl. Phys. Lett. 75 (1999) 4195
7. Katsuyama T., Bedair S.M., Giles N.C., Burns R.P., and Schetzina J.F. J. Appl. Phys. 62 (1987) 498
8. Lynch M.C., Ballard I.M., Bushnell D.B., Connolly J.P., Johnson D.C., Tibbits T.N.D., and Barnham K.W.J. J. Mater. Sci. 40 (2005) 1445
9. Matthews J.W., and Blakeslee A.E. J. Cryst. Growth 29 (1975) 273
10. Matthews J.W., and Blakeslee A.E. J. Cryst. Growth 32 (1976) 265
11. Cunningham J.E., Goossen K.W., and Jan W. J. Cryst. Growth 127 (1993) 184
12. Ekins-Daukes N.J., Kawaguchi K., and Zhang J. Cryst. Growth Des. 2 (2002) 287
13. Zorn M., Bugge F., Schenk T., Zeimer U., Weyers M., and Zettler J.-T. Semicond. Sci. Technol. 21 (2006) 45
14. Wolfram P., Steimetz E., Ebert W., Grote N., and Zettler J.-T. J. Cryst. Growth 272 (2004) 118
15. Wolfram P., Steimetz E., Ebert W., Henninger B., and Zettler J.T. J. Cryst. Growth 248 (2003) 240