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Journal of Crystal Growth

Volumn 272, Issue 1-4 SPEC. ISS., 2004, Pages 118-124

Routine growth of InP based device structures using process calibration with optical in-situ techniques

(5) Wolfram, P a Steimetz, E b Ebert, W a Grote, N a Zettler, J T b

a FRAUNHOFER HEINRICH HERTZ INSTITUTE (Germany)

b LayTec GmbH (Germany)

Author keywords

A1. In situ monitoring; A1. Reflectance anisotropy spectroscopy; A3. Metalorganic vapor phase epitaxy; B1. InGaAsP

Indexed keywords

ANISOTROPY; COMPOSITION; CRYSTAL LATTICES; METALLORGANIC VAPOR PHASE EPITAXY; PHOSPHORUS; SEMICONDUCTOR MATERIALS; SPECTROSCOPIC ANALYSIS; X RAY DIFFRACTION;

ARSENIC RATIO; COMBINED REFLECTANCE; IN-SITU MONITORING; REFLECTANCE ANISOTROPY SPECTROSCOPY;

INDIUM COMPOUNDS;

EID: 9944236218 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2004.09.060 Document Type: Conference Paper

Times cited : (13)

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