Feedback controlled growth of strain-balanced InGaAs multiple quantum wells in metal-organic vapour phase epitaxy using an in situ curvature sensor

Semiconductor Science and Technology

Volumn 21, Issue 9, 2006, Pages

  Zorn, M ^a   Bugge, F ^a   Schenk, T ^b   Zeimer, U ^a   Weyers, M ^a   Zettler, J T ^b  

^a LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

^b LayTec GmbH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SENSORS; STRAIN; X RAY DIFFRACTION;

FULL STRAIN COMPENSATION; GAASP LAYER; IN SITU CURVATURE MEASUREMENT; STRAIN THEORY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 33747236704     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/21/9/L01     Document Type: Article

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