A 2.0 μm cutoff wavelength separate absorption, charge, and multiplication layer avalanche photodiode using strain-compensated InGaAs quantum wells

Applied Physics Letters

Volumn 74, Issue 18, 1999, Pages 2581-2583

  Dries, J Christopher ^a   Gokhale, Milind R ^a   Forrest, Stephen R ^a  

^a Princeton University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AVALANCHE DIODES; CURRENT VOLTAGE CHARACTERISTICS; IONIZATION OF SOLIDS; LIGHT ABSORPTION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; STRAIN;

AVALANCHE PHOTODIODES; DARK CURRENTS; INDIUM GALLIUM ARSENIDE;

PHOTODIODES;

EID: 0032621622     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.123904     Document Type: Article

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