Growth of InGaAsP/InP-laser structures monitored by using RAS techniques

Journal of Crystal Growth

Volumn 248, Issue SUPPL., 2003, Pages 240-243

  Wolfram, P ^a   Steimetz, E ^b   Ebert, W ^a   Henninger, B ^b   Zettler, J T ^b  

^a FRAUNHOFER HEINRICH HERTZ INSTITUTE   (Germany)

^b LayTec GmbH   (Germany)

Author keywords

A1. In situ monitoring; A1. Reflectance anisotropy spectroscopy; A3. Metalorganic vapor phase epitaxy; B1. InGaAsP

Indexed keywords

ANISOTROPY; LASER APPLICATIONS; SEMICONDUCTOR DOPING; VAPOR PHASE EPITAXY;

REFLECTANCE ANISOTROPY SPECTROSCOPY (RAS);

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0037292179     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)01858-4     Document Type: Conference Paper

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