InGaAs/GaAsP strain-compensated superlattice solar cell for enhanced spectral response

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2010, Pages 3383-3385

  Wang, Yunpeng ^a   Wen, Yu ^a   Sugiyama, Masakazu ^b   Nakano, Yoshiaki ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

GAAS; LOCALIZED DEFECTS; RECOMBINATION CENTERS; SPECTRAL RESPONSE; STRAIN MANAGEMENT; STRAIN-COMPENSATED; THIN BARRIERS; WAVELENGTH RANGES;

GALLIUM ALLOYS; GALLIUM ARSENIDE; LATTICE MISMATCH; MONOLAYERS; PHOTOVOLTAIC EFFECTS; SOLAR CELLS; SUPERLATTICES; WELLS;

SEMICONDUCTING GALLIUM;

EID: 78650150542     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2010.5614127     Document Type: Conference Paper

References (2)

1. N. J. Ekins-Daukes, K. W. J. Barnham, J. P. Connolly, J. S. Roberts, J. C. Clark, G. Hill and M. Mazzer, Appl. Phys. Lett. 75 (1999), p. 4195.
2. M. C. Lynch, I. M. Ballard, D. B. Bushnell, J. P. Connolly, D. C. Johnson, T. N. D. Tibbits and K. W. J. Barnham, J. Materials Science 40 (2005), p. 1445.