Overgrowth of GaN on GaN nanowires produced by mask-less etching

Journal of Crystal Growth

Volumn 352, Issue 1, 2012, Pages 203-208

  Frajtag, P ^a   Hosalli, A M ^a   Samberg, J P ^a   Colter, P C ^a   Paskova, T ^a   El Masry, N A ^a   Bedair, S M ^a  

^a North Carolina State University   (United States)

Author keywords

A1. Defects; A1. Etching; A1. GaN nanowires; A1. X ray diffraction; A3. Lateral overgrowth; B1. Nitrides

Indexed keywords

DEFECT REDUCTION; DISLOCATION DENSITIES; ETCHING RATE; GAN FILM; GAN NANOWIRES; HIGH DISLOCATION DENSITY; LATERAL OVERGROWTH; RESIDUAL STRAINS; SAPPHIRE SUBSTRATES;

DEFECTS; NANOWIRES; SAPPHIRE; SINGLE CRYSTALS; X RAY DIFFRACTION;

GALLIUM NITRIDE;

EID: 84863300651     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2011.12.055     Document Type: Conference Paper

References (20)

1. J. Jasinski Physica Status Solidi (c) 2 2005 994
2. K. Kumakura, T. Makimoto, N. Kobayashi, T. Hashizume, T. Fukui, and H. Hasegawa Applied Physics Letters 86 2005 052105
3. O.H. Nam, T.S. Zheleva, M.D. Bremser, and R.F. Davis Journal of Electronic Materials 27 1998 233
4. S. Nakamura MRS bulletin/Materials Research Society 23 1998 37
5. T. Tang, C. Lin, Y. Chen, W. Shiao, W. Chang, C. Liao, K. Shen, C. Yang, M. Hsu, J. Yeh, and T. Hsu IEEE Transactions on Electronic Devices 57 2010 1
6. T. Zheleva, S. Smith, D. Thomson, and K. Linthicum Journal of Electronic Materials 28 1999 L5 L8
7. D.D. Koleske, M.E. Twigg, A.E. Wickenden, R.L. Henry, R.J. Gorman, J.A. Freitas, and M. Fatemi Applied Physics Letters 75 1999 3141 3143
8. S. Sakai, T. Wang, Y. Morishima, and Y. Naoi Journal of Crystal Growth 221 2000 334 337
9. K. Pakula, R. Bozek, J.M. Baranowski, J. Jasinski, and Z. Liliental-Weber Journal of Crystal Growth 267 2004 1 7
10. P. Frajtag, N.A. El-Masry, N. Nepal, and S.M. Bedair Applied Physics Letters 98 2011 023115
11. P. Frajtag, J.P. Samberg, N.A. El-Masry, N. Nepal, and S.M. Bedair Journal of Crystal Growth 322 1 2011 27 32
12. J. Elsner, R. Jones, P.K. Sitch, V.D. Porezag, M. Elstner, T. Frauenheim, M.I. Heggie, S. Oberg, and P.R. Briddon Physical Review Letters 79 1997 3672
13. B. Heying, E.J. Tarsa, C.R. Elsass, P. Fini, S.P. DenBaars, and J.S. Speck Journal of Applied Physics 85 1999 6470
14. Y. Xin, S.J. Pennycook, N.D. Browning, P.D. Nellist, S. Sivananthan, F. Omnes, B. Beaumont, J.P. Faurie, and P. Gibart Applied Physics Letters 72 1998 2680
15. J. Kang, S. Tsunekawa, B. Shen, Z. Mai, C. Wang, T. Tsuru, and A. Kasuya Journal of Crystal Growth 229 2001 58
16. B.N. Pantha, R. Dahal, M.L. Nakarmi, N. Nepal, J. Li, J.Y. Lin, H.X. Jiang, Q.S. Paduano, and D. Weyburne Applied Physics Letters 90 2007 241101
17. C. Dunn, and E. Kogh Acta Metallurgica 5 1957 548 554
18. D.G. Zhao, S.J. Xu, M.H. Xie, D.S.Y. Tong, and H. Yang Applied Physics Letters 83 4 2003 677
19. E.V. Etzkorn, and R.D. Clarke Journal of Applied Physics 89 2001 1025
20. T. Paskova, L. Becker, T. Boettcher, D. Hommel, P.P. Paskov, and B. Monemar Journal of Applied Physics 102 2007 123507