Effect of sapphire-substrate thickness on the curvature of thick GaN films grown by hydride vapor phase epitaxy

Journal of Applied Physics

Volumn 102, Issue 12, 2007, Pages

  Paskova, T ^a,c   Becker, L ^a   Bottcher T ^a,d   Hommel, D ^a   Paskov, P P ^b   Monemar, B ^b  

^a UNIVERSITY OF BREMEN   (Germany)

^b LINKÖPING UNIVERSITY   (Sweden)

^c KYMA TECHNOLOGIES INC   (United States)

^d PHILIPS RESEARCH LABORATORIES   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

GAN FILMS; SAPPHIRE-SUBSTRATE THICKNESS; VARIABLE TEMPERATURES;

GALLIUM NITRIDE; SAPPHIRE; TEMPERATURE DISTRIBUTION; VAPOR PHASE EPITAXY;

THIN FILMS;

EID: 37549035381     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2817955     Document Type: Article

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