35.2: High-performance solution-processed oxide TFT with dual channel at low temperature

Digest of Technical Papers - SID International Symposium

Volumn 42 1, Issue , 2011, Pages 476-478

  Jeong, Woong Hee ^a   Kim, Kyung Min ^a   Kim, Dong Lim ^a   Rim, You Seung ^a   Kim, Hyun Jae ^a   Park, Kyung Bae ^b   Ryu, Myung Kwan ^b  

^a Yonsei University   (South Korea)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; CARRIER CONCENTRATION; CARRIER MOBILITY; CARRIER TRANSPORT; INDIUM COMPOUNDS; TEMPERATURE; THIN FILMS; THRESHOLD VOLTAGE; ZINC COMPOUNDS;

COMPOSITION RATIO; DUAL CHANNEL; IZO THIN FILMS; LOW TEMPERATURES; ON/OFF RATIO; OXIDE THINFILM TRANSISTORS (TFTS); SATURATION MOBILITY; SOLUTION-PROCESSED;

THIN FILM TRANSISTORS;

EID: 84863214415     PISSN: 0097966X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1889/1.3621359     Document Type: Conference Paper

References (12)

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