Improvement of light extraction efficiency and reduction of leakage current in GaN-based LED via V-pit formation

IEEE Photonics Technology Letters

Volumn 24, Issue 6, 2012, Pages 449-451

  Koike, Kayo ^a   Lee, Seogwoo ^a   Cho, Sung Ryong ^a   Park, Jinsub ^b   Lee, Hyojong ^c   Ha, Jun Seok ^d   Hong, Soon Ku ^e   Lee, Hyun Yong ^d   Cho, Meoung Whan ^a   Yao, Takafumi ^f  

^a Hanyang University ^*

^b Hanyang University   (South Korea)

^c Dong A University   (South Korea)

^d Chonnam National University   (South Korea)

^e Chungnam National University   (South Korea)

^f TOHOKU UNIVERSITY   (Japan)

Author keywords

Gallium nitride; light emitting diodes; surface texture; V shaped pit formation

Indexed keywords

ACTIVE REGIONS; GAN BASED LED; GAN-BASED LIGHT-EMITTING DIODES; LED STRUCTURE; LIGHT OUTPUT POWER; LIGHT-EXTRACTION EFFICIENCY; OUTPUT POWER; REVERSE VOLTAGES; SCATTERING PROBABILITIES; SURFACE TEXTURE; TEXTURED SURFACE; THREADING DISLOCATION; V-SHAPED-PIT FORMATION;

GALLIUM NITRIDE; LIGHT EMISSION; METALLORGANIC CHEMICAL VAPOR DEPOSITION;

LIGHT EMITTING DIODES;

EID: 84863135536     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2011.2180523     Document Type: Article

References (12)

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