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Volumn 20, Issue 5-6, 2011, Pages 770-773
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Enhancement in the extraction efficiency and resisting electrostatic discharge ability of GaN-based light emitting diode by naturally grown textured surface
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Author keywords
Electrostatic discharge (ESD); Extraction efficiency; Gallium nitride (GaN); Light emitting diode (LED); Textured surface
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Indexed keywords
EXTRACTION EFFICIENCIES;
EXTRACTION EFFICIENCY;
GAN BASED LED;
GAN-BASED LIGHT-EMITTING DIODES;
HIGH GROWTH TEMPERATURES;
HIGH TEMPERATURE;
METALORGANIC CHEMICAL VAPOR DEPOSITION;
OUTPUT POWER;
REVERSE BIAS VOLTAGE;
SURFACE LAYERS;
TEXTURED GROWTH;
TEXTURED SURFACE;
DIODES;
ELECTROSTATIC DEVICES;
ELECTROSTATIC DISCHARGE;
EXTRACTION;
GALLIUM ALLOYS;
GALLIUM NITRIDE;
GROWTH TEMPERATURE;
LIGHT EMISSION;
METALLORGANIC CHEMICAL VAPOR DEPOSITION;
ORGANIC CHEMICALS;
SEMICONDUCTING GALLIUM COMPOUNDS;
SURFACES;
ORGANIC LIGHT EMITTING DIODES (OLED);
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EID: 79956125304
PISSN: 09259635
EISSN: None
Source Type: Journal
DOI: 10.1016/j.diamond.2011.03.028 Document Type: Article |
Times cited : (13)
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References (12)
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