메뉴 건너뛰기




Volumn 20, Issue 5-6, 2011, Pages 770-773

Enhancement in the extraction efficiency and resisting electrostatic discharge ability of GaN-based light emitting diode by naturally grown textured surface

Author keywords

Electrostatic discharge (ESD); Extraction efficiency; Gallium nitride (GaN); Light emitting diode (LED); Textured surface

Indexed keywords

EXTRACTION EFFICIENCIES; EXTRACTION EFFICIENCY; GAN BASED LED; GAN-BASED LIGHT-EMITTING DIODES; HIGH GROWTH TEMPERATURES; HIGH TEMPERATURE; METALORGANIC CHEMICAL VAPOR DEPOSITION; OUTPUT POWER; REVERSE BIAS VOLTAGE; SURFACE LAYERS; TEXTURED GROWTH; TEXTURED SURFACE;

EID: 79956125304     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2011.03.028     Document Type: Article
Times cited : (13)

References (12)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.