In situ measurement of fluid pressure at the wafer-pad interface during chemical mechanical polishing of 12-inch wafer

Journal of the Electrochemical Society

Volumn 159, Issue 1, 2012, Pages

  Zhao, Dewen ^a   He, Yongyong ^a   Lu, Xinchun ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

APPLIED LOADS; APPLIED PRESSURE; BLANKET WAFERS; DOWN PRESSURE; FLUID FILMS; FLUID PRESSURES; IN-SITU; IN-SITU MEASUREMENT; INTERFACIAL FLUID PRESSURE; LEADING EDGE; NEGATIVE PRESSURES; POSITIVE PRESSURE; PRESSURE CONTOURS; RADIAL DIRECTION; TRAILING EDGES; WAFER SURFACE; CHEMICAL MECHANICAL POLISHING(CMP);

ELECTROCHEMICAL PROPERTIES; ELECTROCHEMISTRY;

CHEMICAL MECHANICAL POLISHING;

EID: 84863124037     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/2.023201jes     Document Type: Article

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