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Applied Physics Letters

Volumn 100, Issue 5, 2012, Pages

2-bit operation based on modulated Fowler-Nordheim tunneling in charge-trapping flash memory cell

(3) Hung, Min Feng a Wu, Yung Chun a Chen, Jiang Hung a

a NATIONAL TSING HUA UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL HOT ELECTRON INJECTION; CHARGE TRAP; CHARGE TUNNELING; FLASH MEMORY CELL; FOWLER-NORDHEIM; FOWLER-NORDHEIM TUNNELING; MEMORY APPLICATIONS; POLY-CRYSTALLINE SILICON; PROGRAM/ERASE; TRANSFER CURVES;

POLYSILICON;

FLASH MEMORY;

EID: 84863078722 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3681145 Document Type: Article

Times cited : (9)

References (14)

1
- 2942696234
- 10.1016/j.sse.2004.03.021
- R. A. Rao, R. F. Steimle, M. Sadd, C. T. Swift, B. Hradsky, S. Straub, T. Merchant, M. Stoker, S. G. H. Anderson, M. Rossow, Solid-State Electron. 48, 1463 (2004). 10.1016/j.sse.2004.03.021
- (2004) Solid-State Electron. , vol.48 , pp. 1463
- Rao, R.A.¹ Steimle, R.F.² Sadd, M.³ Swift, C.T.⁴ Hradsky, B.⁵ Straub, S.⁶ Merchant, T.⁷ Stoker, M.⁸ Anderson, S.G.H.⁹ Rossow, M.¹⁰

2
- 19944410470
- 10.1109/TDMR.2004.837209
- B. De Salvo, C. Gerardi, R. van Schaijk, S. A. Lombardo, D. Corso, C. Plantamura, S. Serafino, G. Ammendola, M. van Duuren, P. Goarin, IEEE Trans. Device Mater. Reliab. 44, 377 (2004). 10.1109/TDMR.2004.837209
- (2004) IEEE Trans. Device Mater. Reliab. , vol.44 , pp. 377
- De Salvo, B.¹ Gerardi, C.² Van Schaijk, R.³ Lombardo, S.A.⁴ Corso, D.⁵ Plantamura, C.⁶ Serafino, S.⁷ Ammendola, G.⁸ Van Duuren, M.⁹ Goarin, P.¹⁰

3
- 0034315780
- 10.1109/55.877205
- B. Eitan, P. Pavan, I. Bloom, E. Aloni, A. Frommer, and D. Finzi, IEEE Electron Device Lett. 21, 543 (2000). 10.1109/55.877205
- (2000) IEEE Electron Device Lett. , vol.21 , pp. 543
- Eitan, B.¹ Pavan, P.² Bloom, I.³ Aloni, E.⁴ Frommer, A.⁵ Finzi, D.⁶

4
- 33947706731
- 10.1109/TED.2006.890379
- Y. H. Lin, C. H. Chien, T. H. Chou, T. S. Chao, and T. F. Lei, IEEE Trans. Electron Devices 54, 531 (2007). 10.1109/TED.2006.890379
- (2007) IEEE Trans. Electron Devices , vol.54 , pp. 531
- Lin, Y.H.¹ Chien, C.H.² Chou, T.H.³ Chao, T.S.⁴ Lei, T.F.⁵

5
- 42549134015
- 10.1063/1.2910460
- Y. C. Wu, M. F. Hung, C. W. Chang, and P. W. Su, Appl. Phys. Lett. 92, 163506 (2008). 10.1063/1.2910460
- (2008) Appl. Phys. Lett. , vol.92 , pp. 163506
- Wu, Y.C.¹ Hung, M.F.² Chang, C.W.³ Su, P.W.⁴

6
- 68949150580
- 10.1149/1.3177277
- M.-W. Ma, T.-Y. Chiang, C.-R. Yeh, T.-S. Chao, and T.-F. Lei, Electrochem. Solid-State Lett. 12, H361 (2009). 10.1149/1.3177277
- (2009) Electrochem. Solid-State Lett. , vol.12 , pp. 361
- Ma, M.-W.¹ Chiang, T.-Y.² Yeh, C.-R.³ Chao, T.-S.⁴ Lei, T.-F.⁵

7
- 33947587642
- 10.1063/1.2715443
- S. C. Chen, T. C. Chang, P. T. Liu, Y. C. Wu, P. H. Yeh, C. F. Weng, S. M. Sze, C. Y. Chang, and C. H. Lien, Appl. Phys. Lett. 90, 122111 (2007). 10.1063/1.2715443
- (2007) Appl. Phys. Lett. , vol.90 , pp. 122111
- Chen, S.C.¹ Chang, T.C.² Liu, P.T.³ Wu, Y.C.⁴ Yeh, P.H.⁵ Weng, C.F.⁶ Sze, S.M.⁷ Chang, C.Y.⁸ Lien, C.H.⁹

8
- 77957859786
- H. T. Lue, T. H. Hsu, Y. H. Hsiao, S. P. Hong, M. T. Wu, F. H. Hsu, N. Z. Lien, S. Y. Wang, J. Y. Hsieh, L. W. Yang, T. Yang, K. C. Chen, K. Y. Hsieh, C. Y. Lu, Dig. Tech. Pap.-Symp. VLSI Technol. 131 (2010).
- (2010) Dig. Tech. Pap.-Symp. VLSI Technol. , pp. 131
- Lue, H.T.¹ Hsu, T.H.² Hsiao, Y.H.³ Hong, S.P.⁴ Wu, M.T.⁵ Hsu, F.H.⁶ Lien, N.Z.⁷ Wang, S.Y.⁸ Hsieh, J.Y.⁹ Yang, L.W.¹⁰ Yang, T.¹¹ Chen, K.C.¹² Hsieh, K.Y.¹³ Lu, C.Y.¹⁴

9
- 0016597193
- 10.1063/1.321593
- J. Y. W. Seto, J. Appl. Phys. 46, 5247 (1975). 10.1063/1.321593
- (1975) J. Appl. Phys. , vol.46 , pp. 5247
- Seto, J.Y.W.¹

10
- 79952677984
- 10.1109/TNANO.2009.2038479
- L. J. Chen, Y. C. Wu, J. H. Chiang, M. F. Hung, C. W. Chang, and P. W. Su, IEEE Trans. Nanotechnol. 10, 260 (2011). 10.1109/TNANO.2009.2038479
- (2011) IEEE Trans. Nanotechnol. , vol.10 , pp. 260
- Chen, L.J.¹ Wu, Y.C.² Chiang, J.H.³ Hung, M.F.⁴ Chang, C.W.⁵ Su, P.W.⁶

11
- 33846569863
- Integrated Systems Engineering (ISE), AG Zurich.
- ISE TCAD Manual Release 10.0, Integrated Systems Engineering (ISE), AG Zurich, 2004.
- (2004) ISE TCAD Manual Release 10.0

12
- 0004005306
- 3rd ed. (Wiley, New York)
- S. M. Sze and K. K. Ng, Physics of Semiconductor Devices, 3rd ed. (Wiley, New York, 2007), p. 437.
- (2007) Physics of Semiconductor Devices , pp. 437
- Sze, S.M.¹ Ng, K.K.²

13
- 33749124051
- (Kluwer Academic, Norwell)
- P. Cappelletti, C. Golla, P. Olivo, and E. Zanoni, Flash Memory (Kluwer Academic, Norwell, 1999), p. 167.
- (1999) Flash Memory , pp. 167
- Cappelletti, P.¹ Golla, C.² Olivo, P.³ Zanoni, E.⁴

14
- 0021483045
- S. Tam, P. K. Ko, and C. Hu, IEEE Trans. Electron Devices ED-31, 1116 (1984).
- (1984) IEEE Trans. Electron Devices , vol.31 , pp. 1116
- Tam, S.¹ Ko, P.K.² Hu, C.³

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