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Volumn 100, Issue 5, 2012, Pages

Effect of the graded electron blocking layer on the emission properties of GaN-based green light-emitting diodes

(9) Zhang, Ning a Liu, Zhe a Wei, Tongbo a Zhang, Lian a Wei, Xuecheng a Wang, Xiaodong a Lu, Hongxi a Li, Jinmin a Wang, Junxi a

a INSTITUTE OF GEOLOGY AND GEOPHYSICS (China)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN; BLUE SHIFT; ELECTROLUMINESCENCE INTENSITY; ELECTRON BLOCKING LAYER; EMISSION PROPERTIES; FORWARD CURRENTS; FORWARD VOLTAGE; INGAN/GAN; INJECTION CURRENTS; LIGHT OUTPUT POWER;

GALLIUM NITRIDE; LIGHT EMISSION; SEMICONDUCTOR QUANTUM WELLS;

LIGHT EMITTING DIODES;

EID: 84863037694 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3681797 Document Type: Article

Times cited : (51)

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