Effects of AlN nucleation layer thickness on crystal quality of AlN grown by plasma-assisted molecular beam epitaxy

Chinese Physics B

Volumn 19, Issue 11, 2010, Pages

  Ren, Fan ^a   Hao, Zhi Biao ^a   Hu, Jian Nan ^a   Zhang, Chen ^a   Luo, Yi ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

Aluminum nitride; Nucleation layer; Plasma assisted molecular beam epitaxy

Indexed keywords

ALN; ALN FILMS; ALN NUCLEATION LAYERS; ATOMIC FORCE MICROSCOPES; CRACK FREE; CRITICAL NUCLEATION; CRYSTAL GRAINS; CRYSTAL QUALITIES; CRYSTALLINE QUALITY; HIGH QUALITY; HIGH TEMPERATURE; IN-SITU ANNEALING; LAYER GROWTH; NUCLEATION LAYER; NUCLEATION LAYERS; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; ROCKING CURVES; SAPPHIRE SUBSTRATES; SURFACE PROFILES; TRANSMISSION ELECTRON MICROSCOPE; XRD;

ALUMINUM; CRYSTALLINE MATERIALS; EPITAXIAL GROWTH; FULL WIDTH AT HALF MAXIMUM; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NITRIDES; NUCLEATION; PLASMAS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

ALUMINUM NITRIDE;

EID: 78650003343     PISSN: 16741056     EISSN: None     Source Type: Journal    
DOI: 10.1088/1674-1056/19/11/116801     Document Type: Article

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