High Quality A1N with a Thin Interlayer Grown on a Sapphire Substrate by Plasma-Assisted Molecular Beam Epitaxy

Chinese Physics Letters

Volumn 27, Issue 6, 2010, Pages

  Ren, Fan ^a   Hao, Zhi Biao ^a   Zhang, Chen ^a   Hu, Jian Nan ^a   Luo, Yi ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITE FILMS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; SAPPHIRE;

CRYSTALLINE QUALITY; EPI LAYERS; GROWTH MODES; HIGH QUALITY; INTERLAYER STRUCTURE; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; SAPPHIRE SUBSTRATES; THIN INTERLAYERS; THREADING DISLOCATION; V/III RATIO;

SURFACE ROUGHNESS;

EID: 77953853100     PISSN: 0256307X     EISSN: 17413540     Source Type: Journal    
DOI: 10.1088/0256-307X/27/6/068101     Document Type: Article

References (21)

1. Hirayama H, Yatabe, Ohashi T and Kamata N 2008 Phys. Status Solidi C 5 2283
2. Dahal R, Al Tahtamouni T M, Lin J Y and Jiang H X 2007 Appl. Phys. Lett. 91 243503
3. Dabiran A M, Wowchak A M, Osinsky A, Xie J, Hertog B, Cui B, Look D C and Chow P P 2008 Appl. Phys. Lett. 93 082111
4. Sakai M, Ishikawa H, Egawa T, Jimbo T, Umeno M, Shibata T, Asai K, Sumiya S, Kuraoka Y, Tanaka M and Oda O 2002 J. Cryst. Growth 244 6
5. Yu H, M Ozturk K, Ozcelik S and Ozbay E 2006 J. Cryst. Growth 293 273
6. Li X H, Zhong F, Qiu K, Yin Z J and Ji C J 2008 Chin. Phys. B 17 1360
7. Chen Z, Qhalid Fareed R S, Gaevski M, Adivarahan V, Yang J W, Khan A, Mei J and Ponce F A 2006 Appl. Phys. Lett. 89 081905
8. Chen Z, Newman S, Brown D, Chung R, Keller S, Mishra U K, Denbaars S P and Nakamura S 2008 Appl. Phys. Lett. 93 191906
9. Shen X Q, Tanizu Y, Ide T and Okumura H 2003 Phys. Status Solidi C 7 2511
10. Liu B, Fu Q M, Wu K M and Liu C 2008 J. Korean Phys. Soc. 52 S17
11. Ichimiya A and Cohen P I 2004 Reflection High-energy Electron Diffraction (Cambridge: Cambridge University) p 93
12. Wang H M, Zhang J P, Chen C Q, Fareed Q, Yang J W and Khan M A 2002 Appl. Phys. Lett. 81 604
13. Chierchia R, Böttcher T, Heinke H, Einfeldt S, Figge S and Hommel D 2003 J. Appl. Phys. 93 8918
14. Zheng X H, Chen H, Yan Z B, Han Y J, Yu H B, Li D S, Huang Q and Zhou J M 2003 J. Cryst. Growth 255 63
15. Paduano Q S, Weyburne D W, Serafinczuk J, Jasinski J and Liliental-Weber Z 2003 Phys. Status Solidi C 0 2014
16. Srikant V, Speck J S and Clarke D R 1997 J. Appl. Phys. 82 4286
17. Lee S R, West A M, Allerman A A, Waldrip K E, Follstaedt D M, Provencio P P, Koleske D D and Abernathy C R 2005 Appl. Phys. Lett. 86 241904
18. Zhang C, Hao Z B, Ren F, Hu J N and Luo Y 2010 Chin. Phys. Lett. 27 058101
19. Edgar J H, Strite S, Akaski I, Amano H and Wetzell C 1999 Properties, Processing and Applications of Gallium, Nitride and Related (London: INSPEC, the Institution of Electrical Engineers) p 3
20. Moran B, Wu F, Romanov A E, Mishra U K, Danbaars S P and Speck J S 2004 J. Cryst. Growth 273 38
21. Webb J B, Tang H, Bardwell J A, Moisa S, Peters C and MacElwee T 2001 J. Cryst. Growth 230 584