III-nitride grating grown on freestanding HfO 2 gratings

Nanoscale Research Letters

Volumn 6, Issue , 2011, Pages 1-5

  Wang, Yongjin ^a   Wu, Tong ^b   Hu, Fangren ^b   Kanamori, Yoshiaki ^b   Zhu, Hongbo ^a   Hane, Kazuhiro ^b  

^a NANJING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS   (China)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

Fast atom beam etching; InGaN GaN QWs; Molecular beam epitaxy

Indexed keywords

FAST ATOM BEAMS; FILM EVAPORATION; GRATING STRUCTURES; GROWTH CONDITIONS; GUIDED-MODE RESONANCE; III-NITRIDE; INGAN/GAN; INGAN/GAN QUANTUM WELL; PHOTOLUMINESCENCE SPECTRUM; SILICON PROCESS; STRESS CHANGES;

DIFFRACTION GRATINGS; ELECTRON BEAMS; ETCHING; GUIDED ELECTROMAGNETIC WAVE PROPAGATION; HAFNIUM OXIDES; MOLECULAR BEAM EPITAXY; NITRIDES; PHOTOLUMINESCENCE; SEMICONDUCTOR QUANTUM WELLS;

EPITAXIAL GROWTH;

EID: 84862947787     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1186/1556-276x-6-497     Document Type: Article

References (22)

1. Rosenberg A, Carter M, Casey J, Kim M, Holm R, Henry R, Eddy C, Shamamian V, Bussmann K, Shi S, Prather D: Guided resonances in asymmetrical GaN photonic crystal slabs observed in the visible spectrum. Opt Express 2005, 13:6564-6571.
2. Choi HW, Hui KN, Lai PT, Chen P, Zhang XH, Tripathy S, Teng JH, Chua SJ: Lasing in GaN microdisks pivoted on Si. Appl Phys Lett 2006, 89:211101.
3. Meier C, Hennessy K, Haberer ED, Sharma R, Choi YS, McGroddy K, Keller S, DenBaars SP, Nakamura S, Hu EL: Visible resonant modes in GaN-based photonic crystal membrane cavities. Appl Phys Lett 2006, 88:031111.
4. Rosenberg A, Bussmann K, Kim M, Carter MW, Mastro MA, Holm RT, Henry RL, Caldwell JD, Eddy CR Jr: Fabrication of GaN suspended photonic crystal slabs and resonant nanocavities on Si(111). J Vac Sci Technol B 2007, 25(3):721.
5. Arita M, Ishida S, Kako S, Iwamoto S, Arakawa Y: AlN air-bridge photonic crystal nanocavities demonstrating high quality factor. Appl Phys Lett 2007, 91:051106.
6. Cimalla V, Pezoldt J, Ambacher O: Group III nitride and SiC based MEMS and NEMS: materials properties, technology and applications. J Phys D: Appl Phys 2007, 40:6386.
7. Matsubara H, Yoshimoto S, Saito H, Yue JL, Tanaka Y, Noda S: GaN Photonic-crystal surface-emitting laser at blue-violet wavelengths. Science 2008, 319:445-447.
8. Kikuchi A, Kawai M, Tada M, Kishino K: InGaN/GaN multiple quantum disk nanocolumn light-emitting diodes grown on (111) Si substrate. Jpn J Appl Phys 2004, 43:L1524.
9. Kishino K, Sekiguchi H, Kikuchi A: Improved Ti-mask selective-area growth (SAG) by rf-plasma-assisted molecular beam epitaxy demonstrating extremely uniform GaN nanocolumn arrays. J Cryst Growth 2009, 311:2063-2068.
10. Wang YJ, Hu FR, Hane K: Patterned growth of InGaN/GaN quantum wells on freestanding GaN grating by molecular beam epitaxy. Nanoscale Res Lett 2011, 6:117.
11. Wang YJ, Hu FR, Hane K: Lateral epitaxial overgrowth of GaN on patterned GaN-on-silicon substrate by molecular beam epitaxy. Semicond Sci Technol 2011, 26:045015.
12. Armitage R, Yang Q, Feick H, Gebauer J, Weber ER, Shinkai S, Sasaki K: Lattice-matched HfN buffer layers for epitaxy of GaN on Si. Appl Phys Lett 2002, 81:1450-1452.
13. Xu X, Armitage R, Shinkai S, Sasaki K, Kisielowski C, Weber ER: Epitaxial condition and polarity in GaN grown on a HfN-buffered Si(111) wafer. Appl Phys Lett 2005, 86:182104.
14. Sameshima H, Wakui M, Hu FR, Hane K: A freestanding GaN/HfO2 membrane grown by molecular beam epitaxy for GaN-Si hybrid MEMS. IEEE J Sel Top Quantum Electron 2009, 15:1332-1337.
15. Priambodo PS, Maldonado TA, Magnusson R: Fabrication and characterization of high-quality waveguide-mode resonant optical filters. Appl Phys Lett 2003, 83:3248.
16. Wang Y, Lin Z, Cheng X, Xiao H, Zhang F, Zou S: Study of HfO2 thin films prepared by electron beam evaporation. Apple Surf Sci 228:93.
17. Chaganti K, Salakhutdinov I, Avrutsky I, Auner G, Mansfield J: Sub-micron grating fabrication on hafnium oxide thin-film waveguides with focused ion-beam milling. Opt Express 2006, 14:1505.
18. Wang YJ, Wu T, Kanamori Y, Hane K: Freestanding HfO2 grating fabricated by fast atom beam etching. Nanoscale Res Lett 2011, 6:367.
19. Kuykendall T, Ulrich P, Aloni S, Yang PD: Complete composition tenability of InGaN nanowires using a combinatorial approach. Nat Mater 2007, 6:951-956.
20. Houdré R, Stanley RP, Ilegems M: Vacuum-field Rabi splitting in the presence of inhomogeneous broadening: resolution of a homogeneous line width in an inhomogeneously broadened system. Phys Rev A 1996, 53:2711-2715.
21. Andreani LC, Panzarini G, Kavokin AV, Vladimirova MR: Effect of inhomogeneous broadening on optical properties of excitons in quantum wells. Phys Rev B 1998, 57:4670.
22. Christmann G, Butteé R, Carlin J-F, Mosca M, Grandjean N, Feltin E: Room temperature polariton luminescence from a GaN/AlGaN quantum well microcavity. Appl Phys Lett 2006, 89:071107.