Junction temperature dynamics of power MOSFET and SiC diode

2009 IEEE 6th International Power Electronics and Motion Control Conference, IPEMC '09

Volumn , Issue , 2009, Pages 269-273

  Pyo, S ^a   Sheng, K ^a  

^a RUTGERS UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANALYTICAL CALCULATION; CURRENT CURVE; DYNAMIC VARIATIONS; EQUIVALENT THERMAL; HIGH-TEMPERATURE CAPABILITY; JUNCTION TEMPERATURES; MOS-FET; POWER DEVICES; POWER MOSFET; SIC DIODES; STEADY-STATE VALUES; SYSTEM DESIGN;

CIRCUIT SIMULATION; DIODES; ELECTRIC EQUIPMENT; MOSFET DEVICES; MOTION CONTROL; MOTION PLANNING; POWER ELECTRONICS; SILICON; SILICON CARBIDE; SPICE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 77951097005     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IPEMC.2009.5157397     Document Type: Conference Paper

References (5)

1. K. Sheng, B. W. Williams, S. J. Finney, "Maximum operating junction temperature of PT and NPT IGBTs", Electronics Letters, Vol. 34, No. 23, 1998, pp. 2276-2277.
2. R. W. Johnson, J. R. Bromstead, G. B. Weir, "200°C operation of semiconductor power devices", IEEE Transactions on Components, Hybrids, and Manufacturing Technology, Vol. 16, No. 7, 1993, pp. 759-764.
3. P. G. Neudeck, D. J. Spry, L. Y. Chen, G. M. Beheim, R. S. Okojie, C. W. Chang, R. D. Meredith, T. L. Ferrier, L. J. Evans, M. J. Krasowski, and N. F. Prokop, "Stable Electrical Operation of 6H-SiC JFETs and ICs for Thousands of Hours at 500° C", IEEE Electron Device Letters, Vol. 29, No. 5, 2008, pp. 456-459.
4. K. Sheng, "Maximum Junction Temperature of SiC Power Devices", IEEE Transactions on Electron Devices, Vol. 56, No. 2, 2009, pp. 337-342
5. Heatsink Datasheet, Wakefield Thermal Solutions, http://www.wakefield. com/.