Enhancement in thermal stability of atomic layer deposited HfO2 films by using top Hf metal layer

Microelectronic Engineering

Volumn 84, Issue 9-10, 2007, Pages 2226-2229

  Park, Tae Joo ^a   Kim, Jeong Hwan ^a   Jang, Jae Hyuck ^a   Seo, Minha ^a   Na, Kwang Duk ^a   Hwang, Cheol Seong ^a  

^a Research Center   (South Korea)

Author keywords

Grain size; HfO2; Oxygen absorption layer

Indexed keywords

ATOMIC LAYER DEPOSITION; HAFNIUM COMPOUNDS; NUCLEATION; THERMODYNAMIC STABILITY; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

CAPACITANCE EQUIVALENT THICKNESS (CET); DC SPUTTERING METHOD; NUCLEATION SITES; POST-DEPOSITION ANNEALING;

THIN FILMS;

EID: 34248641416     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2007.04.082     Document Type: Article

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