Many-electron multiplet theory applied to o-atom vacancies in high-κ dielectrics

Japanese Journal of Applied Physics

Volumn 50, Issue 4 PART 2, 2011, Pages

  Lucovsky, Gerald ^a   Miotti, Leonardo ^a   Bastos, Karen Paz ^a  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPLEX OXIDES; DIPOLE TRANSITION; ENERGY LEVEL DIAGRAMS; HIGH SPIN STATE; HUND'S RULE; JAHN TELLER EFFECT; LIGAND FIELD; MANY ELECTRON; NANOCRYSTALLINE THIN FILMS; NEW MODEL; O-ATOM VACANCIES; QUANTITATIVE AGREEMENT; RELATIVE ENERGIES; SPIN DEGENERACY; SPIN STATE; STATE TRANSITIONS; TIO;

ABSORPTION; EXCITED STATES; HAFNIUM COMPOUNDS; NEGATIVE IONS; SILICON COMPOUNDS; SPIN DYNAMICS; TRANSITION METALS; VACANCIES; X RAY ABSORPTION; X RAY ABSORPTION SPECTROSCOPY;

ABSORPTION SPECTROSCOPY;

EID: 79955389726     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.50.04DA15     Document Type: Article

References (27)

1. G. Lucovsky, K. B. Chung, L. Miotti, K. Pas Bastos, C. Adamo, and D. Schlom: Solid-State Electron. 53 (2009) 1273.
2. G. Lucovsky, H. Seo, S. Lee, L. B. Fleming, M. D. Ulrich, J. Lüning, P. Lysaght, and G. Bersuker: Jpn. J. Appl. Phys. 46 (2007) 1899.
3. K. Xiong, J. Robertson, and S. J. Clark: Appl. Phys. Lett. 87 (2005) 183505.
4. J. L. Gavartin, D. Muñoz Ramo, and A. L. Shluger: Appl. Phys. Lett. 89 (2006) 082908.
5. H. Takeuchi, D. Ha, and T. J. King: J. Vac. Sci. Technol. A 22 (2004) 1337.
6. J. Price, G. Bersuker, and P. S. Lysaght: J. Vac. Sci. Technol. B 27 (2009) 310.
7. J.-L. Autran, D. Munteanu, and M. Houssa: in High-K Gate Dielectrics, ed. M. Houssa (IOP Publishing, Bristol, U.K., 2004) Chap. 3.4.
8. P. A. Cox: Transition Metal Oxides (Clarendon, Oxford, U.K., 1992) Chaps. 2, 3, and 5.
9. F. A. Cotton: Chemical Applications of Group Theory (Wiley, New York, 1963) 2nd ed., Chap. 8.
10. R. M. White and T. H. Geballe: Long Range Order in Solids (Academic Press, New York, 1979) Chaps. 1 and 2.
11. H. A. Jahn and E. Teller: Proc. R. Soc. London, Ser. A 161 (1937) 220.
12. H. A. Jahn: Proc. R. Soc. London, Ser. A 164 (1938) 117.
13. Y. Tanabe and S. Sugano: J. Phys. Soc. Jpn. 11 (1956) 864.
14. F. M. F. DeGroot, J. C. Fuggle, B. T. Thoule, and G. A. Swatzky: Phys. Rev. B 41 (1990) 928.
15. F. de Groot and A. Kotani: Core Level Spectroscopy of Solids (CRC Press, Boca Raton, FL, 2008).
16. L. Fleming, C. C. Fulton, G. Lucovsky, J. E. Rowe, M. D. Ulrich, and J. Lüning: J. Appl. Phys. 192 (2007) 03370.
17. C. C. Fulton and G. Lucovsky: unpublished.
18. X-ray Data Booklet, ed. A. Thompson et al. (Lawrence Berkeley National Laboratory, Berkeley, CA, 2001).
19. W. A. Harrison: Elementary Electronic Structure (World Scientific, Singapore, 1999).
20. G. Lucovsky: unpublished.
21. G. Lucovsky, R. Sladek, and J. W. Allen: Phys. Rev. B 16 (1977) 5452.
22. J. Schäfer, A. P. Young, L. J. Brillson, H. Niimi, and G. Lucovsky: Appl. Phys. Lett. 73 (1998) 791.
23. Y. M. Strzhemechny, M. Bataiev, S. P. Tumakha, S. H. Goss, C. L. Hinkle, C. C. Fulton, G. Lucovsky, and L. J. Brillson: J. Vac. Sci. Technol. B 26 (2008) 232.
24. G. Lucovsky: Jpn. J. Appl. Phys. 50 (2011) 04DC09.
25. S. M. Sze: Semiconductor Devices: Physics and Technology (Wiley, New York, 2002) 2nd ed., Chap. 3.
26. P. C. Arnett and D. J. Maria: J. Appl. Phys. 47 (1976) 2093.
27. D. K. Schroeder: Microelectron. Reliab. 47 (2007) 841.