Effect of deposition temperature of siox passivation layer on the electrical performance of a-IGZO TFTs

IEEE Electron Device Letters

Volumn 33, Issue 3, 2012, Pages 396-398

  Choi, Sung Hwan ^a   Han, Min Koo ^a  

^a Seoul National University   (South Korea)

Author keywords

IGZO TFTs; passivation; temperature

Indexed keywords

CHANNEL LAYERS; DEPOSITION TEMPERATURES; DEPTH PROFILE; DIFFERENT SUBSTRATES; ELECTRICAL CHARACTERISTIC; ELECTRICAL PERFORMANCE; HIGH ENERGY; HIGH TEMPERATURE; IGZO TFTS; IMPROVED RELIABILITY; LOW TEMPERATURES; PASSIVATION LAYER; TIME-OF-FLIGHT SECONDARY ION MASS SPECTROSCOPY; ZN ATOMS;

GALLIUM; GALLIUM ALLOYS; INDIUM; ION BOMBARDMENT; METAL IONS; TEMPERATURE; THIN FILM TRANSISTORS; ZINC;

PASSIVATION;

EID: 84862831245     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2181320     Document Type: Article

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