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Volumn 12, Issue 12, 2009, Pages

Effect of excimer laser annealing on the performance of amorphous indium gallium zinc oxide thin-film transistors

(8) Ahn, Byung Du a,b Jeong, Woong Hee b Shin, Hyun Soo b Kim, Dong Lim b Kim, Hyun Jae b Jeong, Jae Kyeong c Choi, Sung Hwan d Han, Min Koo d

a SAMSUNG Electronics (South Korea)

b Yonsei University (South Korea)

c Inha University (South Korea)

d Seoul National University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DEVICE PERFORMANCE; EXCIMER LASER ANNEALING; FIELD-EFFECT MOBILITIES; INDIUM GALLIUM ZINC OXIDES; LASER ENERGY DENSITY; ON/OFF RATIO; SOURCE/DRAIN REGIONS; SUBTHRESHOLD SWING; XECL EXCIMER LASER;

AMORPHOUS FILMS; EXCIMER LASERS; GALLIUM; GAS LASERS; INDIUM; SEMICONDUCTING ORGANIC COMPOUNDS; THIN FILM DEVICES; ZINC; ZINC OXIDE;

THIN FILM TRANSISTORS;

EID: 70350072678 PISSN: 10990062 EISSN: None Source Type: Journal
DOI: 10.1149/1.3231132 Document Type: Article

Times cited : (28)

References (13)

1
- 9744248669
- Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
- DOI 10.1038/nature03090
- K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, Nature (London) 0028-0836, 432, 488 (2004). 10.1038/nature03090 (Pubitemid 39585210)
- (2004) Nature , vol.432 , Issue.7016 , pp. 488-492
- Nomura, K.¹ Ohta, H.² Takagi, A.³ Kamiya, T.⁴ Hirano, M.⁵ Hosono, H.⁶

2
- 34548684568
- High performance thin film transistors with cosputtered amorphous indium gallium zinc oxide channel
- DOI 10.1063/1.2783961
- J. K. Jeong, J. H. Jeong, H. W. Yang, J. -S. Park, Y. -G. Mo, and H. D. Kim, Appl. Phys. Lett. 0003-6951, 91, 113505 (2007). 10.1063/1.2783961 (Pubitemid 47416041)
- (2007) Applied Physics Letters , vol.91 , Issue.11 , pp. 113505
- Jeong, J.K.¹ Jeong, J.H.² Yang, H.W.³ Park, J.-S.⁴ Mo, Y.-G.⁵ Kim, H.D.⁶

3
- 43049114999
- 0022-3093,. 10.1016/j.jnoncrysol.2007.10.071
- H. Hosono, K. Nomura, Y. Ogo, T. Uruga, and T. Kamiya, J. Non-Cryst. Solids 0022-3093, 354, 2796 (2008). 10.1016/j.jnoncrysol.2007.10.071
- (2008) J. Non-Cryst. Solids , vol.354 , pp. 2796
- Hosono, H.¹ Nomura, K.² Ogo, Y.³ Uruga, T.⁴ Kamiya, T.⁵

4
- 34547365696
- Improvements in the device characteristics of amorphous indium gallium zinc oxide thin-film transistors by Ar plasma treatment
- DOI 10.1063/1.2753107
- J. -S. Park, J. K. Jeong, Y. -G. Mo, H. D. Kim, and S. -I. Kim, Appl. Phys. Lett. 0003-6951, 90, 262106 (2007). 10.1063/1.2753107 (Pubitemid 47141109)
- (2007) Applied Physics Letters , vol.90 , Issue.26 , pp. 262106
- Park, J.-S.¹ Jeong, J.K.² Mo, Y.-G.³ Kim, H.D.⁴ Kim, S.-I.⁵

5
- 41949130354
- 0018-9383,. 10.1109/TED.2008.916717
- P. Barquinha, A. M. Vil̀, G. Goņalves, L. Pereira, R. Martins, J. R. Morante, and E. Fortunato, IEEE Trans. Electron Devices 0018-9383, 55, 954 (2008). 10.1109/TED.2008.916717
- (2008) IEEE Trans. Electron Devices , vol.55 , pp. 954
- Barquinha, P.¹ Vil̀, A.M.² Goņalves, G.³ Pereira, L.⁴ Martins, R.⁵ Morante, J.R.⁶ Fortunato, E.⁷

6
- 48649088281
- 0018-9383,. 10.1109/LED.2008.2000815
- J. C. Park, C. J. Kim, S. I. Kim, I. H. Song, S. W. Kim, D. H. Kang, H. Lim, H. Yin, R. J. Jung, E. H. Lee, IEEE Trans. Electron Devices 0018-9383, 29, 879 (2008). 10.1109/LED.2008.2000815
- (2008) IEEE Trans. Electron Devices , vol.29 , pp. 879
- Park, J.C.¹ Kim, C.J.² Kim, S.I.³ Song, I.H.⁴ Kim, S.W.⁵ Kang, D.H.⁶ Lim, H.⁷ Yin, H.⁸ Jung, R.J.⁹ Lee, E.H.¹⁰

7
- 56849099371
- 0003-6951,. 10.1063/1.3028340
- B. D. Ahn, H. S. Shin, H. J. Kim, J. -S. Park, and J. K. Jeong, Appl. Phys. Lett. 0003-6951, 93, 203506 (2008). 10.1063/1.3028340
- (2008) Appl. Phys. Lett. , vol.93 , pp. 203506
- Ahn, B.D.¹ Shin, H.S.² Kim, H.J.³ Park, J.-S.⁴ Jeong, J.K.⁵

8
- 26644455310
- 1071-1023,. 10.1116/1.591479
- T. Akane, K. Sugioka, and K. Midorikawa, J. Vac. Sci. Technol. B 1071-1023, 18, 1406 (2000). 10.1116/1.591479
- (2000) J. Vac. Sci. Technol. B , vol.18 , pp. 1406
- Akane, T.¹ Sugioka, K.² Midorikawa, K.³

9
- 0141745740
- 0021-8979,. 10.1063/1.1594814
- H. W. Jang, T. Sands, and J. -L. Lee, J. Appl. Phys. 0021-8979, 94, 3529 (2003). 10.1063/1.1594814
- (2003) J. Appl. Phys. , vol.94 , pp. 3529
- Jang, H.W.¹ Sands, T.² Lee, J.-L.³

10
- 52649115830
- 0013-4651,. 10.1149/1.2972031
- J. K. Jeong, H. -J. Chung, Y. -G. Mo, and H. D. Kim, J. Electrochem. Soc. 0013-4651, 155, H873 (2008). 10.1149/1.2972031
- (2008) J. Electrochem. Soc. , vol.155 , pp. 873
- Jeong, J.K.¹ Chung, H.-J.² Mo, Y.-G.³ Kim, H.D.⁴

11
- 0004071496
- 3rd ed., John Wiley & Sons, Hoboken, NJ.
- D. K. Schroder, Semiconductor Material and Device Characterization, 3rd ed., p. 208, John Wiley & Sons, Hoboken, NJ (2006).
- (2006) Semiconductor Material and Device Characterization , pp. 208
- Schroder, D.K.¹

12
- 65649106511
- 0031-8965,. 10.1002/pssa.200881303
- T. Kamiya, K. Nomura, and H. Hosono, Phys. Status Solidi A 0031-8965, 206, 860 (2009). 10.1002/pssa.200881303
- (2009) Phys. Status Solidi A , vol.206 , pp. 860
- Kamiya, T.¹ Nomura, K.² Hosono, H.³

13
- 60349115985
- 1882-0778,. 10.1143/APEX.2.021102
- M. Nakata, K. Takechi, K. Azuma, E. Tokumitsu, H. Yamaguchi, and S. Kaneko, Appl. Phys. Express 1882-0778, 2, 021102 (2009). 10.1143/APEX.2.021102
- (2009) Appl. Phys. Express , vol.2 , pp. 021102
- Nakata, M.¹ Takechi, K.² Azuma, K.³ Tokumitsu, E.⁴ Yamaguchi, H.⁵ Kaneko, S.⁶

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