Preferential growth of Bi2Te3 films with a nanolayer structure: Enhancement of thermoelectric properties induced by nanocrystal boundaries

Journal of Nanoparticle Research

Volumn 14, Issue 4, 2012, Pages

  Deng, Yuan ^a   Zhang, Zhiwei ^a   Wang, Yao ^a   Xu, Yibin ^b  

^a BEIHANG UNIVERSITY   (China)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

Nanocrystal boundaries; Thermoelectric; Thin film

Indexed keywords

BISMUTH COMPOUNDS; DEPOSITION RATES; GRAIN BOUNDARIES; HALL MOBILITY; HOLE MOBILITY; MAGNETRONS; NANOCRYSTALS; THIN FILMS;

ELECTRICAL CONDUCTIVITY; ENHANCED CARRIER MOBILITY; MAGNETRON CO-SPUTTERING; NANOCRYSTAL BOUNDARIES; NANOLAYER STRUCTURES; PREFERENTIAL GROWTH; THERMOELECTRIC; THERMOELECTRIC PROPERTIES;

BISMUTH ALLOYS;

ALLOY; BISMUTH; BISMUTH TELLURIDE; MOLECULAR LAYER; NANOCRYSTAL; NANOFILM; UNCLASSIFIED DRUG;

ARTICLE; CHEMICAL PARAMETERS; CHEMICAL REACTION; CHEMICAL STRUCTURE; DIFFUSION; ELECTRIC CONDUCTIVITY; ELECTRICAL PARAMETERS; ELECTROCHEMICAL ANALYSIS; PREFERENTIAL GROWTH; PRIORITY JOURNAL; THERMAL CONDUCTIVITY; THERMOELECTRIC;

EID: 84862828854     PISSN: 13880764     EISSN: 1572896X     Source Type: Journal    
DOI: 10.1007/s11051-012-0775-y     Document Type: Article

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