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Volumn 88, Issue 5, 2011, Pages 541-544
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Effects of post-annealing on thermoelectric properties of bismuth-tellurium thin films deposited by co-sputtering
a,b
b
b
a
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Author keywords
Bi Te film; Magnetron sputtering; Post annealing; Thermoelectric properties
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Indexed keywords
ANNEALED SAMPLES;
BI-TE FILM;
COSPUTTERING;
CRYSTALLINITIES;
ELECTRICAL TRANSPORT;
MICROSTRUCTURE CHANGES;
MICROSTRUCTURE CHARACTERIZATION;
MICROSTRUCTURE EVOLUTIONS;
POST ANNEALING TREATMENT;
POST-ANNEALING;
POWER FACTORS;
RADIO FREQUENCY MAGNETRON SPUTTERING;
SI SUBSTRATES;
TELLURIUM TARGET;
THERMOELECTRIC FILM;
THERMOELECTRIC PROPERTIES;
BISMUTH;
ELECTRIC POWER FACTOR;
ELECTRIC PROPERTIES;
ELECTRON MOBILITY;
MAGNETRON SPUTTERING;
MICROSTRUCTURE;
SCANNING ELECTRON MICROSCOPY;
SILICON COMPOUNDS;
SUBSTRATES;
TELLURIUM;
TELLURIUM COMPOUNDS;
THERMOELECTRIC EQUIPMENT;
THERMOELECTRICITY;
X RAY DIFFRACTION;
ANNEALING;
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EID: 79952486621
PISSN: 01679317
EISSN: None
Source Type: Journal
DOI: 10.1016/j.mee.2010.06.036 Document Type: Conference Paper |
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Times cited : (29)
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References (9)
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