Direct growth of compound semiconductor nanowires by on-film formation of nanowires: Bismuth telluride

Nano Letters

Volumn 9, Issue 8, 2009, Pages 2867-2872

  Ham, Jinhee ^a,b,c   Shim, Wooyoung ^a,b,c   Kim, Do Hyun ^a,b,c   Lee, Seunghyun ^a,b,c   Roh, Jongwook ^a,b,c   Sohn, Sung Woo ^a,b,c   Oh, Kyu Hwan ^a,b,c   Voorhees, Peter W ^a,b,c   Lee, Wooyoung ^a,b,c  

^a Yonsei University   (South Korea)

^b Seoul National University   (South Korea)

^c Northwestern University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BISMUTH TELLURIDE; COMPETITIVE GROWTH; COMPOUND SEMICONDUCTORS; DIRECT GROWTH; FIGURE OF MERIT; FILM FORMATIONS; HIGH ASPECT RATIO; HIGH CRYSTALLINITY; HIGH EFFICIENCY; HIGH QUALITY; MASS FLOW; NANOSCALE BUILDING BLOCKS; POLYCRYSTALLINE FILM; SINGLE-CRYSTAL; STARTING MATERIALS; STRESS-INDUCED; THERMAL-ANNEALING; THERMOELECTRIC DEVICES; THERMOELECTRIC EFFICIENCY; WIRE GROWTH;

ASPECT RATIO; BISMUTH; BISMUTH COMPOUNDS; ELECTRIC WIRE; FILM GROWTH; GRAIN BOUNDARIES; GRAIN GROWTH; NANOWIRES; SEMICONDUCTOR INSULATOR BOUNDARIES; SINGLE CRYSTALS;

SEMICONDUCTOR GROWTH;

EID: 68949093903     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl9010518     Document Type: Article

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