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Journal of Crystal Growth
Volumn 343, Issue 1, 2012, Pages 55-61
Simulation of temperature and gas density field distribution in diamond films growth on silicon wafer by hot filament CVD
Author keywords

A1. Deposition parameters; A1. Gas density field; A1. Substrate temperature; A3. Diamond films
Indexed keywords

A1. GAS DENSITY FIELD; DEPOSITING PROCESS; DEPOSITION PARAMETERS; GAS DENSITY; HOMOGENEOUS SURFACES; HOT FILAMENT CVD; HOT-FILAMENT CHEMICAL VAPOR DEPOSITION; SILICON (100); SIMULATION MODEL; SUBSTRATE TEMPERATURE; TEMPERATURE DATA;
EID: 84862828018     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2012.01.005     Document Type: Article
Times cited : (48)
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.