Simulation of substrate temperature distribution in diamond films growth on cemented carbide inserts by hot filament CVD

Applied Mechanics and Materials

Volumn 10-12, Issue , 2008, Pages 864-868

  Zuo, W ^a   Shen, B ^a   Sun, F H ^a   Chen, M ^a  

^a SHANGHAI JIAO TONG UNIVERSITY   (China)

Author keywords

Diamond films; Hot filament chemical vapor deposition (HFCVD); Simulation; Temperature field

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DEPOSITION; DIAMOND DEPOSITS; DIAMONDS; FINITE ELEMENT METHOD; SUBSTRATES; TEMPERATURE; TEMPERATURE DISTRIBUTION; THERMOCOUPLES; TUNGSTEN CARBIDE; VAPOR DEPOSITION;

CEMENTED CARBIDES; CEMENTED TUNGSTEN CARBIDES; DEPOSITION PARAMETERS; DIAMOND DEPOSITION; HOT-FILAMENT CHEMICAL VAPOR DEPOSITION; PROCESS PARAMETERS; SIMULATION; THREE DIMENSIONAL FINITE ELEMENT SIMULATION;

DIAMOND FILMS;

EID: 45749151717     PISSN: 16609336     EISSN: 16627482     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/AMM.10-12.864     Document Type: Conference Paper

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