Enhancement of the HFCVD diamond growth process by directed gas flow

Materials Letters

Volumn 32, Issue 2-3, 1997, Pages 143-146

  Yu, Jie ^a   Huang, Rongfang ^a   Wen, Lishi ^a   Shi, Changxu ^a  

^a INSTITUTE OF METAL RESEARCH   (China)

Author keywords

Active species; Diamond; Gas flow rate; Growth rate; HFCVD

Indexed keywords

CHEMICAL VAPOR DEPOSITION; FILM GROWTH; GASES; SUBSTRATES; TEMPERATURE;

GAS FLOW RATE; GROWTH RATE;

DIAMOND FILMS;

EID: 0031210638     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-577X(97)00020-7     Document Type: Article

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