The evaluation of state-of-the-art front-end structures by the differential Hall effect continuous anodic oxidation technique

ECS Transactions

Volumn 19, Issue 1, 2009, Pages 135-146

  Prussin, S ^a   Reyes, J ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CMOS INTEGRATED CIRCUITS; HALL MOBILITY; HOLE MOBILITY; LOGIC GATES; SEMICONDUCTOR DOPING;

ACCURATE MEASUREMENT; ANNEALING TECHNIQUES; CO-IMPLANTATION; DEFECT SCATTERING; DOPED POLYSILICON; FRONT-END STRUCTURES; MOBILITY PROFILES; STATE OF THE ART;

ANODIC OXIDATION;

EID: 74949105583     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3118939     Document Type: Conference Paper

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