Scatter defects and Hall scattering factor for the mobility of boron in silicon

AIP Conference Proceedings

Volumn 1321, Issue , 2010, Pages 181-183

  Prussin, S ^a   Reyes, J ^a   Qin, S ^b   McTeer, A ^b   Hu, Jeff Y ^b   Onoda, H ^c   Hamamoto, N ^c   Nagayama, T ^c   Tanjyo, M ^c  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b MICRON TECHNOLOGY INC   (United States)

^c NISSIN ION EQUIPMENT CO LTD   (Japan)

Author keywords

carrier distribution; Differential Hall Effect; Hall scattering factor; mobility; scatter defects

Indexed keywords

EID: 79251587741     PISSN: 0094243X     EISSN: 15517616     Source Type: Conference Proceeding    
DOI: 10.1063/1.3548342     Document Type: Conference Paper

References (11)

1. J.C. Irwin, Bell Syst. Tech. Journal, vol 41, p 387, 1962.
2. D.M. Caughey and R.E. Thomas, Proc. IEEE, vol. 55, p 2192.
3. G. Baccarani and P. Ostaja, Solid-State Electronics, vol 18, p 579, 1975.
4. W.R. Thurber, R.L. Matthis, Y.M. Liu, and J.J. Filliben, NBS Special Publication 400-64, May 1981
5. R. Galloni and A. Sardo, Rec. Sci. Instrum., vol 54, p 87, 1983.
6. Guido Masetti, Maurizio Severi, and Sandro Solmi, IEEE Trans. on Electron Devices, vol 30, p 764, 1983.
7. nd Ed., John Wiley & Sons, New York, NY, p 551-553, 1998.
8. W.R. Thurber, R.L. Matthis, Y.M. Liu, and J.J. Filliben, J. Electrochem. Soc., vol 127, p 2291, 1980.
9. Y. Sasaki, K. Itoh, E. Inouye, S. Kishi, and T. Mitsuishi, Solid-State Electronics, vol 31, p5, 1988.
10. S. Prussin, S. Qin, J. Reyes, and A. McTeer, AIP Conference Proc., vol. 1066, p. 75, 2008.
11. International Technology Roadmap for Semiconductors, Semiconductro Industry Association (SIA), Austin, Texas.