Study of carrier mobility of low-energy high-dose ion implantations

IEEE Transactions on Plasma Science

Volumn 39, Issue 1 PART 2, 2011, Pages 587-592

  Qin, Shu ^a   Prussin, Simon A ^b   Reyes, Jason ^b   Hu, Yongjun Jeff ^a   McTeer, Allen ^a  

^a MICRON TECHNOLOGY INC   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Carrier and mobility profiles; continuous anodic oxidation technique differential Hall effect (CAOT DHE) method; low energy high dose implants; plasma doping (PLAD); spreading resistance profiling (SRP) method

Indexed keywords

CONTINUOUS ANODIC OXIDATION TECHNIQUE/DIFFERENTIAL HALL EFFECT (CAOT/DHE) METHOD; LOW ENERGIES; MOBILITY PROFILES; PLASMA DOPING (PLAD); SPREADING RESISTANCE PROFILING;

ANODIC OXIDATION; ARSENIC; BORON; ELECTRIC NETWORK ANALYSIS; ELECTRON MOBILITY; ELECTRONS; FORECASTING; GYRATORS; HALL MOBILITY; HOLE MOBILITY; ION IMPLANTATION; PHOSPHORUS; SEMICONDUCTOR DOPING; SILICON;

GALVANOMAGNETIC EFFECTS;

EID: 78651287823     PISSN: 00933813     EISSN: None     Source Type: Journal    
DOI: 10.1109/TPS.2010.2089702     Document Type: Conference Paper

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