Low temperature epitaxial growth of Ge on CaF 2 buffered cube-textured Ni

Journal of Crystal Growth

Volumn 343, Issue 1, 2012, Pages 33-37

  Gaire, C ^a   Palazzo, J ^a   Bhat, I ^a   Goyal, A ^b   Wang, G C ^a   Lu, T M ^a  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^b OAK RIDGE NATIONAL LABORATORY   (United States)

Author keywords

A1: Crystal structure; A1: X ray diffraction; A3: Physical vapor deposition processes; B2: Semiconducting germanium

Indexed keywords

A3: PHYSICAL VAPOR DEPOSITION PROCESSES; DIRECT DEPOSITION; GE FILMS; IN-PLANE DIRECTION; LOW TEMPERATURE EPITAXIAL GROWTH; MISMATCH STRAIN; NI SUBSTRATES; ORTHOGONAL DIRECTIONS; OUT-OF-PLANE; OUT-OF-PLANE DIRECTION; X-RAY POLE FIGURE ANALYSIS;

EPITAXIAL GROWTH; X RAY DIFFRACTION;

GERMANIUM;

EID: 84862777167     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2012.01.035     Document Type: Article

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