Type B epitaxy of Ge on CaF2(111) surface

Surface Science

Volumn 604, Issue 19-20, 2010, Pages 1645-1648

  Chan, T L ^a   Gaire, C ^a   Lu, T M ^a   Wang, G C ^a   Zhang, S B ^a  

^a Rensselaer Polytechnic Institute   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BIAXIALLY TEXTURED; DIRECT BONDING; ELEVATED TEMPERATURE; FIRST-PRINCIPLES CALCULATION; GE ATOM; GE FILMS; HETEROEPITAXIAL GROWTH; THEORETICAL PREDICTION;

CALCIUM; DENSITY FUNCTIONAL THEORY; EPITAXIAL GROWTH; X RAY DIFFRACTION;

GERMANIUM;

EID: 77956262323     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2010.06.008     Document Type: Article

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