Germanium films with strong in-plane and out-of-plane texture on flexible, randomly textured metal substrates

Journal of Crystal Growth

Volumn 311, Issue 21, 2009, Pages 4553-4557

  Selvamanickam, V ^a   Sambandam, S ^b   Sundaram, A ^a   Lee, S ^a   Rar, A ^b   Xiong, X ^b   Alemu, A ^c   Boney, C ^c   Freundlich, A ^c  

^a University of Houston   (United States)

^b SUPERPOWER INC   (United States)

^c University of Houston   (United States)

Author keywords

A1. Texture; A3. Ion beam assisted deposition; A3. Vapor phase epitaxy; B2. Photovoltaic materials; B2. Semiconducting gallium arsenide; B2. Semiconducting germanium

Indexed keywords

A1. TEXTURE; A3. ION BEAM-ASSISTED DEPOSITION; A3. VAPOR PHASE EPITAXY; B2. PHOTOVOLTAIC MATERIALS; B2. SEMICONDUCTING GALLIUM ARSENIDE; B2. SEMICONDUCTING GERMANIUM;

ARSENIC COMPOUNDS; CRYSTAL GROWTH; EPITAXIAL FILMS; EPITAXIAL GROWTH; GALLIUM ALLOYS; GALLIUM COMPOUNDS; ION BEAM ASSISTED DEPOSITION; ION BEAMS; IONS; NICKEL ALLOYS; PHOTOVOLTAIC CELLS; SEMICONDUCTING GALLIUM; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SINGLE CRYSTALS; SUBSTRATES; SUPERCONDUCTING FILMS; TEXTURES; VAPOR PHASE EPITAXY; VAPORS;

SEMICONDUCTING GERMANIUM;

EID: 70349764465     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.08.030     Document Type: Article

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