MOS capacitance-voltage characteristics from electron-trapping at dopant donor impurity

Journal of Semiconductors

Volumn 32, Issue 4, 2011, Pages

  Jie, Binbin ^a,b   Sah, Chihtang ^a,b  

^a XIAMEN UNIVERSITY   (China)

^b CTSAH Associates   (United States)

Author keywords

impurity deionization; MOS capacitance; spintronics; trapping capacitance

Indexed keywords

CAPACITANCE VOLTAGE CHARACTERISTIC; DC VOLTAGE; DEIONIZATION; DEVICE TECHNOLOGIES; DONOR IMPURITIES; DOPANT IMPURITIES; ELECTRON TRAPPING; ELECTRONIC TRAPPING; FERMI-DIRAC DISTRIBUTION; HIGH FREQUENCY HF; LOW FREQUENCY; MAJORITY CARRIERS; MOS CAPACITANCE; POWER SIGNAL PROCESSING; SPINTRONICS; TRAPPING CAPACITANCE;

CAPACITANCE; DC POWER TRANSMISSION; NANOTECHNOLOGY; POINT DEFECTS; SIGNAL PROCESSING;

MOS CAPACITORS;

EID: 79955632732     PISSN: 16744926     EISSN: None     Source Type: Journal    
DOI: 10.1088/1674-4926/32/4/041001     Document Type: Article

References (9)

1. Chen Zuhui, Jie Binbin and Sah Chihtang 2010 Impurity deionization effects on surface recombination DC current-voltage characteristics in MOS transistors," J. Semiconductors 31 (12) 121001-1-10 December
2. Sah Chih-Tang 1991 Fundamentals of Solid-State Electronics (World Scientific, Singapore) p 1001 See section 372 Band-trap thermal (SRH) and optical recombination lifetime". See section 410 Charge control model of MOSC". See section 252 Impurity deionization effects", especially Equation (252.4). See section 251 High carrier concentration effects", especially Equation (251.2)
3. Sah Chih-Tang 1964 Theory of the metal oxide semiconductor capacitor," Solid-state Electronics Laboratory Technical Report No. 1 (University of Illinois at Urbana-Champaign) p 139 December 14
4. Dingle R B 1957 The Femi-Dirac integrals," Appl. Sci. Res. B 6 (1) 225-239
5. Cody W. J. and Thacher H. C, Jr. 1967 Rational Chebyshev approximations for Fermi-Dirac integrals of orders -1/2, 1/2, and 3/2," Math. Comput 21 30-40
6. -3/2(x)," Solid-State Electronics 41 (5) 771-773 (Pubitemid 127378695)
7. Walstra Steve and Sah Chih-Tang 1997 Thin oxide thickness extrapolation from capacitance-voltage measurements," IEEE Trans. Electron Dev 44 (7) 1136-1142 July (Pubitemid 127760362)
8. Hunter William 1971 Thin oxide MOS capacitor studies of fast surface states," Solid-State Electron. Lab. (Univ. Illinois, Urbana) Tech. Rep. 15. See App. B of his Ph. D dissertation in Physics at the University of Illinois, accessible at the Physics Library
9. Sah Chih-Tang 1993 Fundamentals of Solid-State Electronics-Study Guide (World Scientific, Singapore) p 423